DataSheet8.cn


PDF ( 数据手册 , 数据表 ) IRL3303L

零件编号 IRL3303L
描述 HEXFET Power MOSFET
制造商 International Rectifier
LOGO International Rectifier LOGO 


1 Page

No Preview Available !

IRL3303L 数据手册, 描述, 功能
l Logic-Level Gate Drive
l Advanced Process Technology
l Surface Mount (IRL3303S)
l Low-profile through-hole (IRL3303L)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRL3303L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V…
Continuous Drain Current, VGS @ 10V…
Pulsed Drain Current …
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚…
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
PD - 9.1323B
IRL3303S/L
HEXFET® Power MOSFET
D VDSS = 30V
RDS(on) = 0.026
ID = 38A
S
D 2 Pak
T O -262
Max.
38
27
140
3.8
68
0.45
±16
130
20
6.8
5.0
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
Max.
2.2
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
8/25/97







IRL3303L pdf, 数据表
IRL3303S/L
D2Pak Package Outline
1.40 (.055)
MAX.
10.54 ( .415)
10.29 ( .405)
-A-
2
4.69 (.185)
4.20 (.165)
1.78 (.070)
1.27 (.050)
1
3X
1 .4 0
1 .1 4
(. 0 5 5)
(. 0 4 5)
5.08 ( .200)
15.49 (.610)
3 14.73 (.580)
5.28 (.208)
4.78 (.188)
3X
0.93 (.037)
0.69 (.027)
0.25 (.010) M B A M
0.55 (.022)
0.46 (.018)
-B -
1.32 (.052)
1.22 (.048)
2.79 (.110)
2.29 (.090)
1.39 (.055)
1.14 (.045)
10.16 (.400)
REF.
6.47 (.255)
6.18 (.243)
2.61 (.103)
2.32 (.091)
8.89 (.350)
RE F.
MINIMUM RECO MM ENDED F OO TP RINT
11.43 (.450)
NOTE S:
1 DIM ENS IO NS AF T ER S OLDE R DIP .
2 DIM ENS IO NING & TO LERA NCING PE R ANS I Y 14.5M, 1982.
3 CO NT RO LLING DIME NSIO N : INCH.
4 HE AT SINK & LEAD DIMEN SION S DO NO T INCLUDE BURRS.
LE AD ASS IG NM ENT S
1 - GATE
2 - DRA IN
3 - S OU RC E
8.89 (.350)
3.81 (.150)
2.08 (.082)
2X
17.78 (.700)
2.54 (.100)
2X
Part Marking Information
D2Pak
IN TER NATION AL
REC TIFIER
LOGO
ASSEMBLY
LOT CODE
F530S
9246
9B 1M
A
PART NUMBER
DATE CODE
(YYW W )
YY = YEAR
WW = WEEK














页数 10 页
下载[ IRL3303L.PDF 数据手册 ]


分享链接

Link :

推荐数据表

零件编号描述制造商
IRL3303HEXFET POWER MOSFETInternational Rectifier
International Rectifier
IRL3303LHEXFET Power MOSFETInternational Rectifier
International Rectifier
IRL3303LPBFPower MOSFET ( Transistor )International Rectifier
International Rectifier
IRL3303PBFPower MOSFET ( Transistor )International Rectifier
International Rectifier

零件编号描述制造商
STK15C88256-Kbit (32 K x 8) PowerStore nvSRAMCypress Semiconductor
Cypress Semiconductor
NJM4556DUAL HIGH CURRENT OPERATIONAL AMPLIFIERNew Japan Radio
New Japan Radio
EL1118-G5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLEREverlight
Everlight


DataSheet8.cn    |   2020   |  联系我们   |   搜索  |  Simemap