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PDF ( 数据手册 , 数据表 ) IRL3705N

零件编号 IRL3705N
描述 HEXFET Power MOSFET
制造商 International Rectifier
LOGO International Rectifier LOGO 


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IRL3705N 数据手册, 描述, 功能
l Logic-Level Gate Drive
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
G
PD - 9.1370C
IRL3705N
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 0.01
ID =89A…
S
TO-220AB
Max.
89…
63
310
170
1.1
± 16
340
46
17
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
Max.
0.90
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
8/25/97







IRL3705N pdf, 数据表
IRL3705N
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
2 . 8 7 ( .1 1 3 )
2 . 6 2 ( .1 0 3 )
1 5 . 2 4 ( .6 0 0 )
1 4 . 8 4 ( .5 8 4 )
1 4 . 0 9 (.5 5 5 )
1 3 . 4 7 (.5 3 0 )
1 0.5 4 (.41 5)
1 0.2 9 (.40 5)
4
3.78 (.14 9)
3.54 (.13 9)
-A-
6.4 7 (.25 5)
6.1 0 (.24 0)
1 23
1 . 1 5 ( .0 4 5 )
M IN
4.0 6 (.16 0)
3.5 5 (.14 0)
4 . 6 9 ( .1 8 5 )
4 . 2 0 ( .1 6 5 )
-B-
1 .3 2 (. 0 5 2 )
1 .2 2 (. 0 4 8 )
L E A D A S S IG N M E N T S
1 - GATE
2 - DR AIN
3 - SOURCE
4 - DR AIN
3X
1 .4 0 (. 0 5 5 )
1 .1 5 (. 0 4 5 )
2 . 5 4 ( .1 0 0 )
3X
0 . 9 3 ( .0 3 7 )
0 . 6 9 ( .0 2 7 )
0 .3 6 (. 0 1 4 ) M B A M
3X
0.5 5 (.02 2)
0.4 6 (.01 8)
2 .9 2 (. 1 1 5 )
2 .6 4 (. 1 0 4 )
2X
NO TE S :
1 D I M E N S IO N I N G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 .
3 O U T L IN E C O N F O R M S T O J E D E C O U T L I N E T O -2 2 0 A B .
2 C O N T R O L L I N G D IM E N S IO N : I N C H
4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .
Part Marking Information
TO-220AB
E XEAXMAPMLEPL:E T: HTI SHI ISS ISA NA NIRFIR10F10 10
W IWT HIT HA SASSESMEBMLBYLY
LOLTO CT OCDOEDE9B91BM1M
IN TINETRENRANTAIOTNIOANLA L
R ERCETCIFTIEIFRIER
L OLGOOG O
IR FIR10F10 10
9 2 4962 4 6
A SASSESMEBMLBYLY
9B9B 1M1M
LOLTO TCOCDOEDE
AA
P APRATRNT UNMUBMEBRE R
D ADTAETEC OCDOED E
(Y Y(YWYWW)W )
Y YY =Y Y= EYAERA R
W WW W= W= EWEEKEK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice.
8/97














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