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PDF ( 数据手册 , 数据表 ) 76132P

零件编号 76132P
描述 HUF76132P
制造商 ETC
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76132P 数据手册, 描述, 功能
Data Sheet
HUF76132P3, HUF76132S3S
September 1999 File Number 4553.4
75A, 30V, 0.011 Ohm, N-Channel, Logic
Level UltraFET Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET™ process. This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA76132.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF76132P3
TO-220AB
76132P
HUF76132S3S
TO-263AB
76132S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF76132S3ST.
Packaging
DRAIN
(FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
Features
• Logic Level Gate Drive
• 75A, 30V
• Ultra Low On-Resistance, rDS(ON) = 0.011
• Temperature Compensating PSPICE® Model
• Temperature Compensating SABER© Model
• Thermal Impedance SPICE Model
• Thermal Impedance SABER Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
6-130
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.
SABER© is a Copyright of Analogy, Inc. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999







76132P pdf, 数据表
HUF76132P3, HUF76132S3S
PSPICE Electrical Model
SUBCKT HUF76132 2 1 3 ; REV May 1998
CA 12 8 2.35e-9
CB 15 14 2.35e-9
CIN 6 8 1.45e-9
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 33.34
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 5.42e-9
LSOURCE 3 7 4.16e-9
GATE
1
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 3.5e-4
RGATE 9 20 2.61
RLDRAIN 2 5 10
RLGATE 1 9 54.2
RLSOURCE 3 7 41.6
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 6.5-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
LGATE
RLGATE
DPLCAP 5
10
RSLC2
RSLC1
51
5
51
ESLC
DBREAK
11
LDRAIN
DRAIN
2
RLDRAIN
-
ESG
6
8
+ EVTHRES
+ 19 -
EVTEMP
8
RGATE + 18 - 6
9 20 22
50
RDRAIN
16
21
EBREAK
+
17
18
-
MWEAK
MMED
MSTRO
DBODY
CIN
8
S1A
12 13
8
S2A
14
13
15
7
RSOURCE
LSOURCE
SOURCE
3
RLSOURCE
RBREAK
17 18
S1B
S2B
CA 13 CB
+ + 14
EGS
6
8
-
EDS
5
8
-
RVTEMP
19
IT -
VBAT
+
8
22
RVTHRES
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*450),3))}
.MODEL DBODYMOD D (IS = 1.79e-12 IKF = 20 RS = 5.32e-3 TRS1 = 7e-4 TRS2 = 1.21e-6 CJO = 2.65e-9 TT = 3.24e-8 M = 4.2e-1 XTI=6)
.MODEL DBREAKMOD D (RS = 8.25e-2 TRS1 = 9.12e-4 TRS2 = 8.14e-7)
.MODEL DPLCAPMOD D (CJO = 1.3e-9 IS = 1e-30 N = 10 M = 6.1e-1)
.MODEL MMEDMOD NMOS (VTO = 1.86 KP = 4 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 2.61)
.MODEL MSTROMOD NMOS (VTO = 2.2 KP = 120 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 1.63 KP =1e-1 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 26.1 RS=1e-1)
.MODEL RBREAKMOD RES (TC1 = 9.97e-4 TC2 = 1.24e-7)
.MODEL RDRAINMOD RES (TC1 = 7.2e-2 TC2 = 1e-4)
.MODEL RSLCMOD RES (TC1 = 1.07e-3 TC2 = 1.25e-6)
.MODEL RSOURCEMOD RES (TC1 = 1e-11 TC2 = 1e-11)
.MODEL RVTHRESMOD RES (TC1 = -2e-3 TC2 = -9.2e-6)
.MODEL RVTEMPMOD RES (TC1 = -1.08e-3 TC2 = 9.73e-7)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -6.00 VOFF= -1.00)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.00 VOFF= -6.00)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.00 VOFF= 1.65)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 1.65 VOFF= 0.00)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
6-137














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