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PDF ( 数据手册 , 数据表 ) CE2F3P

零件编号 CE2F3P
描述 on-chip resistor NPN silicon epitaxial transistor For mid-speed switching
制造商 NEC
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CE2F3P 数据手册, 描述, 功能
DATA SHEET
COMPOUND TRANSISTOR
CE2F3P
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
The CE2F3P is a transistor of on-chip high hFE resistor
incorporating dumper diode in collector to emitter as protect
elements. This transistor is ideal for actuator drives of OA
equipments and electric equipments.
FEATURES
• On-chip bias resistor: R1 = 2.2 k, R2 = 10 k
• Low power consumption during driving:
VOL = 0.12 V @VI = 5.0 V, IC = 0.5 A
• On-chip dumper diode for reverse cable
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current (DC)
IC(DC)
Collector current (Pulse)
IC(pulse) *
Base current (DC)
IB(DC)
Total power dissipation
PT
Junction temperature
Tj
Storage temperature
Tstg
* PW 10 ms, duty cycle 50 %
Ratings
60
60
15
±2.0
±3.0
0.03
1.0
150
55 to +150
Unit
V
V
V
A
A
A
W
°C
°C
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Collector cutoff current
ICBO VCB = 40 V, IE = 0
100
DC current gain
hFE1 ** VCE = 5.0 V, IC = 0.2 A
700 1200
DC current gain
hFE2 ** VCE = 5.0 V, IC = 1.0 A
1000
1600
3000
DC current gain
hFE3 ** VCE = 5.0 V, IC = 2.0 A
500 1200
Low level output voltage
Low level input voltage
VOL **
VIL **
VI = 5.0 V, IC = 0.5 A
VCE = 12 V, IC = 100 µA
0.12
0.5
0.3
0.4
Input resistance 1
R1
1.54 2.2 2.86
Input resistance 2
R2
7.0 10.0 13.0
Turn-on time
Storage time
Fall time
ton IC = 1.0 A
tstg IBI = IB2 = 10 mA
tf VCC = 20 V, RL = 20
0.4
1.4
0.5
** Pulse test PW 350 µs, duty cycle 2 %
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Unit
nA
V
V
k
k
µs
µs
µs
Document No. D13110EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
21090928












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