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零件编号 | STE38NB50F | ||
描述 | N - CHANNEL PowerMESH MOSFET | ||
制造商 | ST Microelectronics | ||
LOGO | |||
1 Page
® STE38NB50F
N - CHANNEL 500V - 0.11 Ω - 38A - ISOTOP
PowerMESH™ MOSFET
TYPE
V DSS
RDS(on)
ID
STE38NB50F
500 V < 0.14 Ω 38 A
s TYPICAL RDS(on) = 0.11 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s LOW INTRINSIC CAPACITANCE
s GATE CHARGE MINIMIZED
s REDUCED VOLTAGE SPREAD
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstand-
ing performances. The new patent pending strip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, exceptional avalanche and
dv/dt capabilities and unrivalled gate charge and
switching characteristics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLY (SMPS)
s DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY AND MOTOR DRIVE
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
VDS
V DGR
VGS
ID
ID
Drain-source Volt age (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM(•)
Ptot
Drain Current (pulsed)
T otal Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Ts tg Storage T emperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
December 1999
Value
Un it
500 V
500 V
± 30
V
38 A
24 A
152 A
400 W
3.2 W /o C
4 .5
-65 to 150
150
( 1) ISD ≤38 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V/ns
oC
oC
1/8
STE38NB50F
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibil ity for the consequences
of use of such information nor for any infringement of patents or other rights of third parites which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are
subjec t to change without notice. This publication supersedes and replaces all informaiton previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
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页数 | 8 页 | ||
下载 | [ STE38NB50F.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
STE38NB50 | N - CHANNEL PowerMESH MOSFET | ST Microelectronics |
STE38NB50F | N - CHANNEL PowerMESH MOSFET | ST Microelectronics |
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