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PDF ( 数据手册 , 数据表 ) IRFP15N60L

零件编号 IRFP15N60L
描述 HEXFET Power MOSFET
制造商 International Rectifier
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IRFP15N60L 数据手册, 描述, 功能
PD - 94415
SMPS MOSFET IRFP15N60L
Applications
Zero Voltage Switching SMPS
Telecom and Server Power Supplies
Uninterruptible Power Supplies
Motor Control applications
HEXFET® Power MOSFET
VDSS RDS(on) typ. Trr typ. ID
600V 385m130ns 15A
Features and Benefits
SuperFast body diode eliminates the need for external
diodes in ZVS applications.
Lower Gate charge results in simpler drive requirements.
Enhanced dv/dt capabilities offer improved ruggedness.
Higher Gate voltage threshold offers improved noise immunity.
TO-247AC
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
cID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Max.
15
9.7
60
280
Units
A
W
VGS
dv/dt
Linear Derating Factor
dGate-to-Source Voltage
Peak Diode Recovery dv/dt
2.3 W/°C
±30 V
10 V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 150
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw
Diode Characteristics
1.1(10)
N•m (lbf•in)
Symbol
Parameter
Min. Typ. Max. Units Conditions
IS
Continuous Source Current
––– ––– 15
MOSFET symbol
D
(Body Diode)
A showing the
ÃcISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
––– ––– 60
––– ––– 1.5
integral reverse
G
fp-n junction diode.
V TJ = 25°C, IS = 15A, VGS = 0V
S
trr Reverse Recovery Time
––– 130 200 ns TJ = 25°C, IF = 15A
f––– 240 360
TJ = 125°C, di/dt = 100A/µs
fQrr Reverse Recovery Charge ––– 450 670 nC TJ = 25°C, IS = 15A, VGS = 0V
f––– 1080 1620
TJ = 125°C, di/dt = 100A/µs
IRRM Reverse Recovery Current
––– 5.8 8.7 A TJ = 25°C
ton Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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1
02/14/03







IRFP15N60L pdf, 数据表
IRFP15N60L
D.U.T
+
‚
-

RG
Peak Diode Recovery dv/dt Test Circuit
+ Circuit Layout Considerations
Low Stray Inductance
ƒ
Ground Plane
Low Leakage Inductance
Current Transformer
-
- „+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
+
- VDD
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
VGS=10V *
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple 5%
* VGS = 5V for Logic Level Devices
VDD
ISD
Fig 16. For N-Channel HEXFET® Power MOSFETs
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