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零件编号 | IRFP15N60L | ||
描述 | HEXFET Power MOSFET | ||
制造商 | International Rectifier | ||
LOGO | |||
1 Page
PD - 94415
SMPS MOSFET IRFP15N60L
Applications
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
• Uninterruptible Power Supplies
• Motor Control applications
HEXFET® Power MOSFET
VDSS RDS(on) typ. Trr typ. ID
600V 385mΩ 130ns 15A
Features and Benefits
• SuperFast body diode eliminates the need for external
diodes in ZVS applications.
• Lower Gate charge results in simpler drive requirements.
• Enhanced dv/dt capabilities offer improved ruggedness.
• Higher Gate voltage threshold offers improved noise immunity.
TO-247AC
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
cID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Max.
15
9.7
60
280
Units
A
W
VGS
dv/dt
Linear Derating Factor
dGate-to-Source Voltage
Peak Diode Recovery dv/dt
2.3 W/°C
±30 V
10 V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 150
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw
Diode Characteristics
1.1(10)
N•m (lbf•in)
Symbol
Parameter
Min. Typ. Max. Units Conditions
IS
Continuous Source Current
––– ––– 15
MOSFET symbol
D
(Body Diode)
A showing the
ÃcISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
––– ––– 60
––– ––– 1.5
integral reverse
G
fp-n junction diode.
V TJ = 25°C, IS = 15A, VGS = 0V
S
trr Reverse Recovery Time
––– 130 200 ns TJ = 25°C, IF = 15A
f––– 240 360
TJ = 125°C, di/dt = 100A/µs
fQrr Reverse Recovery Charge ––– 450 670 nC TJ = 25°C, IS = 15A, VGS = 0V
f––– 1080 1620
TJ = 125°C, di/dt = 100A/µs
IRRM Reverse Recovery Current
––– 5.8 8.7 A TJ = 25°C
ton Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
www.irf.com
1
02/14/03
IRFP15N60L
D.U.T
+
-
RG
Peak Diode Recovery dv/dt Test Circuit
+ Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
- +
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
- VDD
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
VGS=10V *
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
VDD
ISD
Fig 16. For N-Channel HEXFET® Power MOSFETs
8 www.irf.com
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页数 | 9 页 | ||
下载 | [ IRFP15N60L.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
IRFP15N60L | HEXFET Power MOSFET | International Rectifier |
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