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零件编号 | IRFP150N | ||
描述 | Power MOSFET ( Transistor ) | ||
制造商 | International Rectifier | ||
LOGO | |||
1 Page
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-247 package is preferred for commercial-
industrial applications where higher power levels
preclude the use of TO-220 devices. The TO-247 is
similar but superior to the earlier TO-218 package
because of its isolated mounting hole.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
www.irf.com
G
PD - 91503D
IRFP150N
HEXFET® Power MOSFET
D
VDSS = 100V
RDS(on) = 0.036WΩ
ID = 42A
S
TO-247AC
Max.
42
30
140
160
1.1
± 20
420
22
16
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.24
–––
Max.
0.95
–––
40
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
07/15/02
IRFP150N
Package Outline
TO-247AC Outline
Dimensions are shown in millimeters (inches)
15.90 (.626)
15.30 (.602)
-B-
3.65 (.143)
3.55 (.140)
0.25 (.010) M D B M
-A-
5.50 (.217)
20.30 (.800)
19.70 (.775)
123
14.80 (.583)
14.20 (.559)
2X
5.50 (.217)
4.50 (.177)
-C-
4.30 (.170)
3.70 (.145)
-D-
5.30 (.209)
4.70 (.185)
2.50 (.089)
1.50 (.059)
4
NOTES:
1 DIM E N S IO NING & TO LE R A N CING
P E R A N S I Y 14.5M , 1982.
2 C O N TR O LLIN G D IM E N S IO N : IN C H .
3 CO N F O RM S TO JE D E C O U TLINE
T O -2 4 7 -A C .
2.40 (.094)
2.00 (.079)
2X
5.45 (.215)
2X
1.40 (.056)
3X 1.00 (.039)
0.25 (.010) M
3.40 (.133)
3.00 (.118)
C AS
0.80 (.031)
3X 0.40 (.016)
2.60 (.102)
2.20 (.087)
Part Marking Information
TO-247AC
EXAMPLE : THIS IS AN IRFPE30
W ITH ASSEMBLY
LOT CODE 3A1Q
IN T E R N A T IO N A L
R E C T IF IE R
LOGO
ASSEMBLY
LOT CODE
IR F P E 3 0
3A1Q 9302
LE A D A S S IG N M E N TS
1 - GATE
2 - DR A IN
3 - SOURCE
4 - DR A IN
A
PART NUMBER
DATE CODE
(YYW W )
YY = YEAR
W W W EEK
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California
90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/02
8 www.irf.com
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页数 | 8 页 | ||
下载 | [ IRFP150N.PDF 数据手册 ] |
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