DataSheet8.cn


PDF ( 数据手册 , 数据表 ) IRFP150N

零件编号 IRFP150N
描述 N-Channel Power MOSFET / Transistor
制造商 Fairchild Semiconductor
LOGO Fairchild Semiconductor LOGO 


1 Page

No Preview Available !

IRFP150N 数据手册, 描述, 功能
Data Sheet
January 2002
IRFP150N
44A, 100V, 0.030 Ohm, N-Channel Power MOSFET
Packaging
JEDEC TO-247
SOURCE
DRAIN
GATE
DRAIN
(TAB)
Features
• Ultra Low On-Resistance
- rDS(ON) = 0.030Ω, VGS = 10V
• Simulation Models
- Temperature Compensated PSPICE™ and SABER©
Electrical Models
- Spice and SABER© Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Symbol
D
Ordering Information
PART NUMBER
IRFP150N
PACKAGE
TO-247
BRAND
IRFP150N
G
S
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRFP150N
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous (TC= 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Continuous (TC= 100oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
100
100
±20
44
31
Figure 4
Figures 6, 14, 15
V
V
V
A
A
Power Dissipation . . .
Derate Above 25oC
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
PD
...
155 W
1.03
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 175
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300 oC
260 oC
NOTES:
1. TJ = 25oC to 150oC.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2002 Fairchild Semiconductor Corporation
IRFP150N Rev. B







IRFP150N pdf, 数据表
IRFP150N
SABER Electrical Model
REV 15 Jan 2000
template IRFP150N n2,n1,n3
electrical n2,n1,n3
{
var i iscl
d..model dbodymod = (is = 1.30e-12, cjo = 1.90e-9, tt = 6.5e-8, xti = 5, m = 0.55)
d..model dbreakmod = ()
d..model dplcapmod = (cjo = 2.20e-9, is = 1e-30, vj=1.0, m = 0.83)
m..model mmedmod = (type=_n, vto = 3.21, kp = 5, is = 1e-30, tox = 1)
m..model mstrongmod = (type=_n, vto = 3.58, kp = 37.5, is = 1e-30, tox = 1)
m..model mweakmod = (type=_n, vto = 2.81, kp = 0.07, is = 1e-30, tox = 1)
sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -6.2, voff = -2.4)
sw_vcsp..model s1bmod = (ron =1e-5, roff = 0.1, von = -2.4, voff = -6.2)
DPLCAP
sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = -1.8, voff = 0.5)
10
sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 0.5, voff = -1.8)
c.ca n12 n8 = 2.70e-9
c.cb n15 n14 = 2.70e-9
c.cin n6 n8 = 1.56e-9
RSLC2
5
RSLC1
51
ISCL
RDBREAK
72
LDRAIN
DRAIN
2
RLDRAIN
RDBODY
d.dbody n7 n71 = model=dbodymod
- 50 DBREAK
d.dbreak n72 n11 = model=dbreakmod
d.dplcap n10 n5 = model=dplcapmod
i.it n8 n17 = 1
l.ldrain n2 n5 = 1e-9
l.lgate n1 n9 = 6.5e-9
l.lsource n3 n7 = 2.3e-9
GATE
1
ESG
6
8
RDRAIN
+ EVTHRES 16
+ 19 - 21
LGATE
EVTEMP
8
RGATE + 18 - 6
9 20 22
MMED
RLGATE
MSTRO
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
CIN
8
11
MWEAK
EBREAK
+
17
18
-
7
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
RSOURCE
71
DBODY
LSOURCE
SOURCE
3
RLSOURCE
res.rbreak n17 n18 = 1, tc1 = 1.08e-3, tc2 = -8.6e-7
res.rdbody n71 n5 = 2.86e-3, tc1 = 2.25e-3, tc2 = 1e-6
res.rdbreak n72 n5 = 3.05e-1, tc1 = 8e-4, tc2 = 3e-6
res.rdrain n50 n16 = 1.68e-2, tc1 = 7.70e-3, tc2 = 2.20e-5
res.rgate n9 n20 = 0.86
res.rldrain n2 n5 = 10
res.rlgate n1 n9 = 26
res.rlsource n3 n7 = 11
res.rslc1 n5 n51 = 1e-6, tc1 = 4.25e-3, tc2 = 1.00e-6
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 1.65e-3, tc1 = 1e-3, tc2 = 1e-6
res.rvtemp n18 n19 = 1, tc1 = -3.20e-3, tc2 = 9.67e-7
res.rvthres n22 n8 = 1, tc1 = -2.07e-3, tc2 = -6.65e-6
S1A
12 13
8
S2A
14 15
13
S1B
S2B
CA 13 CB
+ + 14
EGS
6
8
-
EDS
5
8
-
RBREAK
17 18
RVTEMP
19
IT -
VBAT
+
8
22
RVTHRES
spe.ebreak n11 n7 n17 n18 = 113.5
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
spe.evthres n6 n21 n19 n8 = 1
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/98))** 3.5))
}
}
©2002 Fairchild Semiconductor Corporation
IRFP150N Rev. B














页数 10 页
下载[ IRFP150N.PDF 数据手册 ]


分享链接

Link :

推荐数据表

零件编号描述制造商
IRFP150(IRFP150 - IRFP153) HIGH VOLTAGE POWER MOSFET DIEIXYS Corporation
IXYS Corporation
IRFP150Power MOSFET ( Transistor )Vishay
Vishay
IRFP150N-Channel Power MOSFET / TransistorFairchild Semiconductor
Fairchild Semiconductor
IRFP150AN-Channel MOSFET TransistorInchange Semiconductor
Inchange Semiconductor

零件编号描述制造商
STK15C88256-Kbit (32 K x 8) PowerStore nvSRAMCypress Semiconductor
Cypress Semiconductor
NJM4556DUAL HIGH CURRENT OPERATIONAL AMPLIFIERNew Japan Radio
New Japan Radio
EL1118-G5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLEREverlight
Everlight


DataSheet8.cn    |   2020   |  联系我们   |   搜索  |  Simemap