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零件编号 | STE53NC50 | ||
描述 | N-CHANNEL 500V - 0.070ohm - 53A ISOTOP PowerMeshII MOSFET | ||
制造商 | ST Microelectronics | ||
LOGO | |||
1 Page
STE53NC50
N-CHANNEL 500V - 0.070Ω - 53A ISOTOP
PowerMesh™II MOSFET
TYPE
VDSS
RDS(on)
ID
STE53NC50
500V
< 0.08Ω
53 A
n TYPICAL RDS(on) = 0.07 Ω
n EXTREMELY HIGH dv/dt CAPABILITY
n 100% AVALANCHE TESTED
n NEW HIGH VOLTAGE BENCHMARK
n GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
n HIGH CURRENT, HIGH SPEED SWITCHING
n SWITH MODE POWER SUPPLIES (SMPS)
n DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (l) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Winthstand Voltage (AC-RMS)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
May 2002
Value
500
500
±30
53
33
212
460
3.68
3
2500
– 65 to 150
150
(1) ISD≤ 53A, di/dt≤100 A/µs, VDD≤ 24V, Tj≤TjMAX
Unit
V
V
V
A
A
A
W
W/°C
V/ns
V
°C
°C
1/8
STE53NC50
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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© http://www.st.com
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页数 | 8 页 | ||
下载 | [ STE53NC50.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
STE53NC50 | N-CHANNEL 500V - 0.070ohm - 53A ISOTOP PowerMeshII MOSFET | ST Microelectronics |
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