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零件编号 | IRL2505 | ||
描述 | Power MOSFET ( Transistor ) | ||
制造商 | International Rectifier | ||
LOGO | |||
1 Page
l Logic-Level Gate Drive
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The TO-220 is universally preferred for all commercial-
Industrial applications at power dissipation levels to
approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Juction-to-Ambient
www.irf.com
PD - 91325C
IRL2505
HEXFET® Power MOSFET
D VDSS = 55V
RDS(on) = 0.008Ω
ID = 104A
S
TO-220AB
Max.
104
74
360
200
1.3
± 16
500
54
20
5.0
55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
Max.
0.75
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
11/19/01
IRL2505
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
10.54 (.415)
10.29 (.405)
4
3 .7 8 (.149 )
3 .5 4 (.139 )
-A -
6.47 (.255)
6.10 (.240)
1 23
1.15 (.045)
M IN
4.06 (.160)
3.55 (.140)
4.69 ( .18 5 )
4.20 ( .16 5 )
-B -
1.32 (.052)
1.22 (.048)
L E A D A S S IG NM E NT S
1 - GATE
2 - DRAIN
3 - SOU RC E
4 - DRAIN
3X
1 .4 0 (.0 55 )
1 .1 5 (.0 45 )
2.54 (.100)
3X
0.93 (.037)
0.69 (.027)
0 .3 6 (.01 4) M B A M
3X
0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
N OTES:
2X
1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82.
2 C O N TR O L LIN G D IM E N S IO N : IN C H
3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B .
4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S .
TO-220AB Part Marking Information
EXAMPLE : THIS IS AN IRF1010
W ITH ASSEMBLY
LOT CODE 9B1M
INTERNATIONAL
R E C T IF IE R
LOGO
ASSEMBLY
LOT CODE
IR F 10 1 0
9246
9B 1M
A
PART NUMBER
DATE CODE
(YYW W )
YY = YEAR
W W = W EEK
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/01
8 www.irf.com
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页数 | 8 页 | ||
下载 | [ IRL2505.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
IRL2505 | Power MOSFET ( Transistor ) | International Rectifier |
IRL2505L | Power MOSFET ( Transistor ) | International Rectifier |
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IRL2505PBF | HEXFET Power MOSFET | International Rectifier |
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