|
|
零件编号 | P9NB60FP | ||
描述 | STP9NB60FP | ||
制造商 | ST Microelectronics | ||
LOGO | |||
1 Page
STP9NB60
® STP9NB60FP
N - CHANNEL 600V - 0.7Ω - 9A TO-220/TO220FP
PowerMESH™ MOSFET
TYPE
VDSS
RDS(on)
ID
ST P9N B60
ST P9N B60 FP
600 V
600 V
< 0.8 Ω
< 0.8 Ω
9.0 A
9.0 A
s TYPICAL RDS(on) = 0.7 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Parameter
V DS
V DGR
VGS
ID
ID
IDM (•)
Ptot
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (cont inuous) at Tc = 25 oC
Drain Current (cont inuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating F actor
dv/dt(1) Peak Diode Recovery voltage slope
VISO Insulation Withstand Voltage (DC)
Ts tg St orage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
January 2000
Value
STP9NB60 STP9NB60FP
600
600
± 30
9.0 9.0(*)
5.7 5.7(*)
36 36
125 40
1.0 0.32
4.5 4.5
2000
-65 to 150
150
( 1) ISD ≤ 9A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Un it
V
V
V
A
A
A
W
W /o C
V/ns
V
oC
oC
1/9
STP9NB60/FP
DIM.
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L6
L7
Ø
MIN.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
28.6
9.8
15.9
9
3
TO-220FP MECHANICAL DATA
mm
TYP.
16
MAX.
4.6
2.7
2.75
0.7
1
1.7
1.7
5.2
2.7
10.4
30.6
10.6
16.4
9.3
3.2
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
1.126
0.385
0.626
0.354
0.118
inch
TYP.
0.630
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
1.204
0.417
0.645
0.366
0.126
L3
L6
L7
¯
123
L2 L4
8/9
|
|||
页数 | 9 页 | ||
下载 | [ P9NB60FP.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
P9NB60FP | STP9NB60FP | ST Microelectronics |
零件编号 | 描述 | 制造商 |
STK15C88 | 256-Kbit (32 K x 8) PowerStore nvSRAM | Cypress Semiconductor |
NJM4556 | DUAL HIGH CURRENT OPERATIONAL AMPLIFIER | New Japan Radio |
EL1118-G | 5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLER | Everlight |
DataSheet8.cn | 2020 | 联系我们 | 搜索 | Simemap |