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PDF ( 数据手册 , 数据表 ) MW6S010

零件编号 MW6S010
描述 RF Power Field Effect Transistor
制造商 Freescale Semiconductor
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MW6S010 数据手册, 描述, 功能
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for Class A or Class AB base station applications with frequencies
up to 1500 MHz. Suitable for analog and digital modulation and multicarrier
amplifier applications.
Typical Two - Tone Performance
125 mA,
Power
PGoauitn=—101W8 daBtts
PEP
@
960
MHz,
VDD
=
28
Volts,
IDQ
=
Drain Efficiency — 32%
IMD — - 37 dBc
Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW
Output Power
Characterized with Series Equivalent Large - Signal Impedance Parameters
On - Chip RF Feedback for Broadband Stability
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
N Suffix Indicates Lead - Free Terminations
200°C Capable Plastic Package
In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
Document Number: MW6S010
Rev. 1, 5/2005
MW6S010NR1
MW6S010GNR1
MW6S010MR1
MW6S010GMR1
450 - 1500 MHz, 10 W, 28 V
LATERAL N - CHANNEL
BROADBAND RF POWER MOSFETs
CASE 1265 - 08, STYLE 1
TO - 270 - 2
PLASTIC
MW6S010NR1(MR1)
CASE 1265A - 02, STYLE 1
TO - 270 - 2 GULL
PLASTIC
MW6S010GNR1(GMR1)
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VGS
PD
- 0.5, +68
- 0.5, +12
61.4
0.35
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
Tstg - 65 to +175
TJ 200
Characteristic
Symbol
Value (1.2)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 10 W PEP
RθJC
2.85
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
W
W/°C
°C
°C
Unit
°C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
1







MW6S010 pdf, 数据表
Zsource
f = 980 MHz
f = 800 MHz
Zo = 25
f = 980 MHz
Zload
f = 800 MHz
VDD = 28 Vdc, IDQ = 125 mA, Pout = 10 W PEP
f
MHz
Zsource
Zload
800 3.1 + j1.9
10.1 + j2.3
820 2.8 + j1.7
8.3 + j2.5
840 2.7 + j2.2
8.2 + j3.3
860 3.1 + j3.4
9.8 + j4.8
880 3.3 + j3.8
10.6 + j5.6
900 2.9 + j3.7
9.5 + j5.5
920 2.8 + j4.4
10.1 + j5.9
940 3.0 + j4.7
11.0 + j6.4
960 3.2 + j4.9
11.8 + j6.6
980 3.6 + j5.2
12.1 + j7.1
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z source
Z load
Figure 13. Series Equivalent Source and Load Impedance — 900 MHz
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
8
RF Device Data
Freescale Semiconductor







MW6S010 equivalent, schematic
How to Reach Us:
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Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
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and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
Freescale Semiconductor, Inc. 2005. All rights reserved.
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
Document Number: MW6S010
1R6ev. 1, 5/2005
RF Device Data
Freescale Semiconductor










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