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PDF ( 数据手册 , 数据表 ) IGB03N120H2

零件编号 IGB03N120H2
描述 HighSpeed 2-Technology
制造商 Infineon Technologies
LOGO Infineon Technologies LOGO 


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IGB03N120H2 数据手册, 描述, 功能
IGP03N120H2,
IGW03N120H2
IGB03N120H2
HighSpeed 2-Technology
Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
- optimised for soft-switching / resonant topologies
2nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =3A
P-TO-220-3-1
(TO-220AB)
C
G
E
P-TO-263-3-2 (D²-PAK)
(TO-263AB)
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
P-TO-247-3-1
(TO-247AC)
Type
VCE
IC
Eoff
Tj Package
Ordering Code
IGW03N120H2 1200V 3A 0.15mJ 150°C P-TO-247
Q67040-S4596
IGP03N120H2 1200V 3A 0.15mJ 150°C P-TO-220-3-1
Q67040-S4599
IGB03N120H2 1200V 3A 0.15mJ 150°C P-TO-263 (D2PAK) Q67040-S4598
Maximum Ratings
Parameter
Collector-emitter voltage
Triangular collector current
TC = 25°C, f = 140kHz
TC = 100°C, f = 140kHz
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 150°C
Gate-emitter voltage
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
VGE
Ptot
Tj , Tstg
-
Value
1200
9.6
3.9
9.9
9.9
Unit
V
A
±20 V
62.5 W
-40...+150
260
225 (for SMD)
°C
Power Semiconductors
1
Rev. 2, Mar-04







IGB03N120H2 pdf, 数据表
IGP03N120H2,
IGW03N120H2
IGB03N120H2
D=0.5
100K/W
0.2
0.1
0.05
10-1K/W
0.02
0.01
10-2K/W
R,(K/W)
1.082517
0.328671
0.588811
τ, (s)
0.000795
0.000179
0.004631
R1 R2
single pulse C1=τ1/R1 C2=τ2/R2
1µs 10µs 100µs 1ms 10ms 100ms
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC = 3A)
1nF
Ciss
100pF
Coss
10pF
Crss
0V 10V 20V 30V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(VGE = 0V, f = 1MHz)
20V
15V UCE=240V
10V
UCE=960V
5V
0V
0nC
10nC
20nC
30nC
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC = 3A)
1000V
3A
800V
600V
2A
400V
200V
1A
0V 0A
0.0 0.2 0.4 0.6 0.8 1.0 1.2
tp, PULSE WIDTH
Figure 20. Typical turn off behavior, hard
switching
(VGE=15/0V, RG=82, Tj = 150°C,
Dynamic test circuit in Figure E)
Power Semiconductors
8
Rev. 2, Mar-04














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