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PDF ( 数据手册 , 数据表 ) PN108CL

零件编号 PN108CL
描述 Silicon NPN Phototransistor
制造商 Panasonic Semiconductor
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PN108CL 数据手册, 描述, 功能
Phototransistors
PNZ108CL (PN108CL)
Silicon NPN Phototransistor
For optical control systems
Unit : mm
Features
High sensitivity : ICE(L) = 3.5 mA (min.) (at L = 500 lx)
Wide directional sensitivity for easy use
Fast response : tr = 5 µs (typ.)
Signal mixing capability using base pin
Small size (low in height) package
3-ø0.45±0.05
2.54±0.25
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Collector to emitter voltage
Collector to base voltage
Emitter to collector voltage
Emitter to base voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
VCEO
VCBO
VECO
VEBO
IC
PC
Topr
Tstg
Ratings
20
30
3
5
20
100
–25 to +85
–30 to +100
Unit
V
V
V
V
mA
mW
˚C
˚C
3
1
2
1: Emitter
2: Base
2: Collector
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min
Dark current
Collector photo current
Peak sensitivity wavelength
Acceptance half angle
ICEO
ICE(L)*3
λP
θ
VCE = 10V
VCE = 10V, L = 500 lx*1
VCE = 10V
Measured from the optical axis to the half power point
3.5
Rise time
tr*2 VCC = 10V, ICE(L) = 5mA
Fall time
tf*2 RL = 100
Collector saturation voltage VCE(sat) ICE(L) = 1mA, L = 1000 lx*1
*1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2 Switching time measurement circuit
typ
0.05
6
900
80
5
6
0.3
max
2
0.6
Unit
µA
mA
nm
deg.
µs
µs
V
Sig.IN
50
VCC
(Input pulse)
Sig.OUT (Output pulse)
RL
td
tr
90%
10%
tf
td : Delay time
tr : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
*3 ICE(L) Classifications
Class
ICE(L) (mA)
Q
3.5 to 6.0
R
5.0 to 9.1
S
> 7.5
Note) Difficult to guarantee compliance with moisture resistance standard (MIL-STD-202D).
Note) The part number in the parenthesis shows conventional part number.
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