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零件编号 | STD16NE10 | ||
描述 | N-CHANNEL POWER MOSFET | ||
制造商 | ST Microelectronics | ||
LOGO | |||
1 Page
® STD16NE10
N - CHANNEL 100V - 0.07Ω - 16A - IPAK/DPAK
STripFET™ MOSFET
TYPE
VDSS
RDS(on)
ID
ST D16NE10
100 V < 0.1 Ω
16 A
s TYPICAL RDS(on) = 0.07 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
s THROUG-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
DESCRIPTION
This Power MOSFET is the latest development of
SGS-THOMSON unique ”Single Feature Size™ ”
strip-based process.The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s DC MOTOR CONTROL (DISK DRIVERS,etc.)
s DC-DC & DC-ACCONVERTERS
s SYNCHRONOUS RECTIFICATION
3
2
1
IPAK
TO-251
(Suffix ”-1”)
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM ( •)
Ptot
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
July 1998
Value
Uni t
100 V
100 V
± 20
V
16 A
11 A
64 A
50
0.33
W
W/oC
7 V/ ns
-65 to 175
oC
175 oC
(1) ISD ≤ 16 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/9
STD16NE10
DIM.
A
A1
A2
B
B2
C
C2
D
E
G
H
L2
L4
TO-252 (DPAK) MECHANICAL DATA
MIN.
2.2
0.9
0.03
0.64
5.2
0.45
0.48
6
6.4
4.4
9.35
0.6
mm
TYP.
0.8
MAX.
2.4
1.1
0.23
0.9
5.4
0.6
0.6
6.2
6.6
4.6
10.1
1
MIN.
0.086
0.035
0.001
0.025
0.204
0.017
0.019
0.236
0.252
0.173
0.368
0.023
inch
TYP.
0.031
MAX.
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.260
0.181
0.397
0.039
H
DETAIL ”A”
L2 D
DETAIL ”A”
L4
8/9
0068772-B
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页数 | 9 页 | ||
下载 | [ STD16NE10.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
STD16NE10 | N-CHANNEL POWER MOSFET | ST Microelectronics |
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