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PDF ( 数据手册 , 数据表 ) S80728

零件编号 S80728
描述 (S807 Series) High Precision Voltage Detector
制造商 Seiko
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S80728 数据手册, 描述, 功能
Contents
Features........................................................... 1
Applications ..................................................... 1
Pin Assignment................................................ 1
Block Diagram ................................................. 2
Selection Guide ............................................... 3
Output Configurations...................................... 4
Advantage over the S-805 Series.................... 5
Absolute Maximum Ratings............................. 6
Electrical Characteristics ................................. 7
Test Circuits................................................... 23
Technical Terms ............................................ 24
Operation ....................................................... 26
Dimensions.................................................... 28
Taping............................................................ 29
Magazine Dimensions ................................... 31
Markings ........................................................ 32
Characteristics............................................... 33
Measuring Circuits ......................................... 36
Application Circuit Examples ......................... 37
Notes ............................................................. 39
Frequently Asked Questions......................... 40







S80728 pdf, 数据表
HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
 Electrical Characteristics
1. S-80715AL-AC-X, S-80715AN-DC-X (Detection voltage : 1.464 to 1.536 V)
Parameter
Symbol
Conditions
Detection voltage
Hysteresis width
-VDET
VHYS
Current consumption
Operating voltage
Output current
Temperature
characteristic of -
VDET
ISS
VDD
IOUT
-VDET
Ta
VDD = 3.0 V
Nch
VDS = 0.5 V
VDD = 1.2 V
Pch (CMOS VDD = 4.8 V
output)
VDS = 0.5 V
Ta=-30°C to 80°C
(Unless otherwise specified : Ta=25°C)
Min. Typ. Max. Unit Test
circuit
1.464 1.500 1.536
V
1
-VDET
×0.02
-VDET
×0.05
-VDET
×0.08
V
1
1.4 3.5 µA
2
1.0 15.0 V
1
0.23 0.50
mA
3
0.36 0.62
4
 ±0.19 mV/°C
2. S-80716AL-AD-X, S-80716AN/AN-DD-X (Detection voltage : 1.561 to 1.639 V)
Parameter
Symbol
Conditions
Detection voltage
Hysteresis width
-VDET
VHYS
Current consumption
Operating voltage
Output current
Temperature
characteristic of -
VDET
ISS
VDD
IOUT
-VDET
Ta
VDD = 3.0 V
Nch
VDS = 0.5 V
VDD = 1.2 V
Pch (CMOS VDD = 4.8 V
output)
VDS = 0.5 V
Ta=-30°C to 80°C
(Unless otherwise specified : Ta=25°C)
Min. Typ. Max. Unit Test
circuit
1.561 1.600 1.639
V
1
-VDET
×0.02
-VDET
×0.05
-VDET
×0.08
V
1
1.4 3.5 µA
2
1.0 15.0 V
1
0.23 0.50
mA
3
0.36 0.62
4
 ±0.20 mV/°C
3. S-80717AL/AL-AE-X, S-80717AN/AN-DE-X, S-80717SN-DE-X (Detection voltage : 1.659 to 1.741 V)
Parameter
Symbol
Conditions
Detection voltage
Hysteresis width
-VDET
VHYS
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
Temperature
characteristic of -
VDET
-VDET
Ta
VDD = 3.0 V
Nch
VDS = 0.5 V
VDD = 1.2 V
Pch (CMOS VDD = 4.8 V
output)
VDS = 0.5 V
Ta=-30°C to 80°C
(Unless otherwise specified : Ta=25°C)
Min. Typ. Max. Unit Test
circuit
1.659 1.700 1.741
V
1
-VDET
×0.02
-VDET
×0.05
-VDET
×0.08
V
1
1.4 3.5 µA
2
1.0 15.0 V
1
0.23 0.50
mA
3
0.36 0.62
4
 ±0.21 mV/°C
Seiko Instruments Inc.
7







S80728 equivalent, schematic
HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
25. S-80735AL/AL-AZ-X, S-80735AN/AN-DZ-X
S-80735SL-AZ-X, S-80735SN-DZ-X (Detection voltage : 3.416 to 3.584 V)
Parameter
Symbol
Conditions
Detection voltage
Hysteresis width
-VDET
VHYS
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
Temperature
characteristic of -
VDET
-VDET
Ta
VDD = 4.5 V
Nch
VDS = 0.5 V
VDD = 1.2 V
VDD = 2.4 V
Pch (CMOS VDD = 4.8 V
output)
VDS = 0.5 V
Ta=-30°C to 80°C
(Unless otherwise specified : Ta=25°C)
Min. Typ. Max. Unit Test
circuit
3.416 3.500 3.584
V
1
-VDET
×0.02
-VDET
×0.05
-VDET
×0.08
V
1
1.0 3.0 µA
2
1.0 15.0 V
1
0.23 0.50
mA
3
1.60
0.36
3.70
0.62
4
 ±0.44 mV/°C
26. S-80736AL-A0-X, S-80736AN/AN-D0-X (Detection voltage : 3.513 to 3.687 V)
Parameter
Symbol
Conditions
Detection voltage
Hysteresis width
-VDET
VHYS
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
Temperature
characteristic of -
VDET
-VDET
Ta
VDD = 4.5 V
Nch
VDS = 0.5 V
VDD = 1.2 V
VDD = 2.4 V
Pch (CMOS VDD = 4.8 V
output)
VDS = 0.5 V
Ta=-30°C to 80°C
(Unless otherwise specified : Ta=25°C)
Min. Typ. Max. Unit Test
circuit
3.513 3.600 3.687
V
1
-VDET
×0.02
-VDET
×0.05
-VDET
×0.08
V
1
1.0 3.0 µA
2
1.0 15.0 V
1
0.23 0.50
mA
3
1.60
0.36
3.70
0.62
4
 ±0.45 mV/°C
27. S-80737AL/AL-A1-X, S-80737AN/AN-D1-X (Detection voltage : 3.611 to 3.789 V)
Parameter
Symbol
Conditions
Detection voltage
Hysteresis width
-VDET
VHYS
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
Temperature
characteristic of -
VDET
-VDET
Ta
VDD = 6.0 V
Nch
VDS = 0.5 V
VDD = 1.2 V
VDD = 2.4 V
Pch (CMOS VDD = 4.8 V
output)
VDS = 0.5 V
Ta=-30°C to 80°C
(Unless otherwise specified : Ta=25°C)
Min. Typ. Max. Unit Test
circuit
3.611 3.700 3.789
V
1
-VDET
×0.02
-VDET
×0.05
-VDET
×0.08
V
1
1.0 3.0 µA
2
1.0 15.0 V
1
0.23 0.50
mA
3
1.60
0.36
3.70
0.62
4
 ±0.46 mV/°C
Seiko Instruments Inc.
15










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