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零件编号 | STP12NM50 | ||
描述 | N-CHANNEL Power MOSFET | ||
制造商 | ST Microelectronics | ||
LOGO | |||
1 Page
STP12NM50 - STP12NM50FP
STB12NM50 - STB12NM50-1
N-channel 550V @ tjmax - 0.30Ω - 12A TO-220/FP/D2/I2PAK
MDmesh™ Power MOSFET
General features
Type
VDSS
(@Tjmax)
STB12NM50
STB12NM50-1
STP12NM50
STP12NM50FP
550V
550V
550V
550V
RDS(on)
<0.35Ω
<0.35Ω
<0.35Ω
<0.35Ω
ID
12A
12A
12A
12A
■ High dv/dt and avalanche capabilities
■ Low input capacitance and gate charge
■ 100% avalanche tested
■ Low gate input resistance
■ Tight process control and high manufacturing
yields
Description
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain
process with the Company’s PowerMESH™
horizontal layout. The resulting product has an
outstanding low on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the Company’s proprietary strip
technique yields overall dynamic performance
that is significantly better than that of similar
competition’s products.
Applications
■ Switching application
3
2
1
TO-220
3
2
1
TO-220FP
3
1
D²PAK
123
I²PAK
Internal schematic diagram
Order codes
Part number
STB12NM50T4
STB12NM50-1
STP12NM50
STP12NM50FP
Marking
B12NM50
B12NM50
P12NM50
P12NM50FP
Package
D²PAK
I²PAK
TO-220
TO-220FP
Packaging
Tape & reel
Tube
Tube
Tube
July 2006
Rev 11
1/17
www.st.com
17
Electrical characteristics
STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
Figure 13. Source-drain diode forward
characteristics
8/17
Revision history
STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
6 Revision history
Table 7. Revision history
Date
Revision
14-Mar-2004
8
15-Feb-2006
9
05-Apr-2006
10
27-Jul-2006
11
Changes
Preliminary version
New voltage value on first page at tjmax.
Inserted ecopack indication
New template, no content change
16/17
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页数 | 17 页 | ||
下载 | [ STP12NM50.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
STP12NM50 | N-CHANNEL Power MOSFET | ST Microelectronics |
STP12NM50FP | N-CHANNEL MOSFET | STMicroelectronics |
STP12NM50N | N-channel Power MOSFET | STMicroelectronics |
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