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零件编号 | SPI10N10 | ||
描述 | SIPMOS Power-Transistor | ||
制造商 | Infineon Technologies | ||
LOGO | |||
1 Page
Preliminary data
SPI10N10
SPP10N10,SPB10N10
SIPMOS Power-Transistor
Feature
N-Channel
Enhancement mode
175°C operating temperature
Avalanche rated
P-TO262-3-1
dv/dt rated
Product Summary
VDS
RDS(on)
ID
100
170
10.3
V
m
A
P-TO263-3-2
P-TO220-3-1
Type
SPP10N10
SPB10N10
SPI10N10
Package
P-TO220-3-1
P-TO263-3-2
P-TO262-3-1
Ordering Code
Q67042-S4118
Q67042-S4119
Q67042-S4120
Marking
10N10
10N10
10N10
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TC=25°C
TC=100°C
ID
Pulsed drain current
ID puls
TC=25°C
Avalanche energy, single pulse
ID=10.3 A , VDD=25V, RGS=25
EAS
Reverse diode dv/dt
dv/dt
IS=10.3A, VDS=80V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage
VGS
Power dissipation
TC=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Ptot
Tj , Tstg
Value
10.3
7.8
41.2
60
6
±20
50
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2002-01-31
Preliminary data
SPI10N10
SPP10N10,SPB10N10
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Page 8
2002-01-31
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页数 | 8 页 | ||
下载 | [ SPI10N10.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
SPI10N10 | SIPMOS Power-Transistor | Infineon Technologies |
SPI10N10 | SIPMOS Power-Transistor | Infineon Technologies |
SPI10N10L | SIPMOS Power-Transistor | Infineon Technologies |
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