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PDF ( 数据手册 , 数据表 ) DIM200MHS17-A000

零件编号 DIM200MHS17-A000
描述 Half Bridge IGBT Module
制造商 Dynex
LOGO Dynex LOGO 


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DIM200MHS17-A000 数据手册, 描述, 功能
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DIM200MHS17-A000
DIM200MHS17-A000
Half Bridge IGBT Module
Replaces issue March 2002, version DS5459-4.0
DS5459-5.1 June 2002
FEATURES
s 10µs Short Circuit Withstand
s Non Punch Through Silicon
s Isolated Copper Base Plate
KEY PARAMETERS
VCES
1700V
VCE(sat) *
(typ)
2.7V
IC
(max)
200A
IC(PK)
(max)
400A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
s Inverters
s Motor Controllers
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 2400A.
The DIM200MHS17-A000 is a half bridge 1700V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10µs short circuit withstand.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
11(C2)
1(E1C2)
9(C1)
2(E2)
6(G2)
7(E2)
3(C1)
5(E1)
4(G1)
Fig. 1 Half bridge circuit diagram
ORDERING INFORMATION
Order As:
DIM200MHS17-A000
Note: When ordering, please use the whole part number.
11
12
3
6
10 7
85
94
Outline type code: M
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/10







DIM200MHS17-A000 pdf, 数据表
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DIM200MHS17-A000
300
250
200
150
100
50
0
0 20 40 60 80 100 120
Case temperature, Tcase - (˚C)
Fig. 11 DC current rating vs case temperature
140
8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com














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