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零件编号 | BB102C | ||
描述 | Build in Biasing Circuit MOS FET IC UHF RF Amplifier | ||
制造商 | Hitachi | ||
LOGO | |||
1 Page
BB102C
Build in Biasing Circuit MOS FET IC
UHF RF Amplifier
ADE-208-588 (Z)
1st. Edition
November 1997
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise characteristics;
(NF = 2.1 dB typ. at f = 900 MHz)
• Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; CMPAK-4(SOT-343mod)
Outline
CMPAK-4
2
3
1
4 1. Source
2. Gate1
3. Gate2
4. Drain
• Note 1 Marking is “BW–”.
• Note 2 BB302C is individual type number of HITACHI BBFET.
BB102C
S11 Parameter vs. Frequency
.8 1
.6
.4
.2
1.5
2
3
4
5
10
0 .2 .4 .6 .8 1 1.5 2 3 4 5 10
—10
—.2 —5
—4
—3
—.4
—2
—.6
—.8 —1
—1.5
Test Condition : VDS= 9 V , VG1 = 9 V
VG2S = 6 V , R G = 560 k Ω
50 1000 MHz (50 MHz step)
S21 Parameter vs. Frequency
90¡ Scale: 1 / div.
120¡
60¡
150¡
30¡
180¡
0¡
—150¡
—30¡
—120¡
—60¡
—90¡
Test Condition : VDS= 9 V , VG1 = 9 V
VG2S = 6 V , R G = 560 k Ω
50 1000 MHz (50 MHz step)
S12 Parameter vs. Frequency
90¡ Scale: 0.01 / div.
120¡
60¡
150¡
30¡
180¡
0¡
—150¡
—30¡
—120¡
—60¡
—90¡
Test Condition : VDS= 9 V , VG1 = 9 V
VG2S = 6 V , R G = 560 k Ω
50 1000 MHz (50 MHz step)
S22 Parameter vs. Frequency
.8 1
.6
.4
.2
1.5
2
3
4
5
10
0 .2 .4 .6 .8 1 1.5 2 3 4 5 10
—10
—.2 —5
—4
—3
—.4
—2
—.6
—.8 —1
—1.5
Test Condition : VDS= 9 V , VG1 = 9 V
VG2S = 6 V , R G = 560 k Ω
50 1000 MHz (50 MHz step)
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页数 | 11 页 | ||
下载 | [ BB102C.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
BB102C | Build in Biasing Circuit MOS FET IC UHF RF Amplifier | Hitachi |
BB102M | Build in Biasing Circuit MOS FET IC UHF RF Amplifier | Hitachi |
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