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零件编号 | H556 | ||
描述 | PNP Silicon Transistor | ||
制造商 | Shantou Huashan Electronic | ||
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1 Page
Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSISTOR
H556
SWITCHING AND AMPLIFIER
ABSOLUTE MAXIMUM RATINGS Ta=25
TO-92
Tstg Storage Temperature
-55~150
Tj Junction Temperature
150
PC Collector Dissipation
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
500mW
-80V
-65V
1 Collector C
2 Base B
3 Emitter E
VEBO Emitter-Base Voltage
-5V
IC Collector Current
-100mA
ELECTRICAL CHARACTERISTICS Ta=25
Symbol
ICBO
HFE
VCE(sat1)
VCE(sat2)
VBE(sat1)
VBE(sat2)
VBE(ON)
fT
NF
Characteristics
Min Typ Max Unit
Test Conditions
Collector Cut-off Current
-15 nA
VCB=-30V, IE=0
DC Current Gain
110 800
VCE=-5V, IC=-2mA
Collector- Emitter Saturation Voltage
-90 -300 mV IC=-10mA, IB=-0.5mA
-250 -650 mV IC=-100mA, IB=-5mA
Base-Emitter Saturation Voltage
-0.7
V IC=-10mA, IB=-0.5mA
-0.9
V IC=-100mA, IB=-5mA
Base-Emitter On Voltage
-600 -660 -750 mV VCE=-5V, IC=-2mA
Current Gain-Bandwidth Product
150 MHz VCE=-5V, IC=-10mA
f=100MHz
Noise Figure
2 10 dB VCE=-5V, IC=-200 A
f=1KHz Rg=2K
hFE Classification
A
110 220
B
200 450
C
420 800
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页数 | 1 页 | ||
下载 | [ H556.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
H5551 | NPN SILICON TRANSISTOR | SHANTOU HUASHAN ELECTRONIC DEVICES |
H556 | PNP Silicon Transistor | Shantou Huashan Electronic |
H557 | NPN SILICON TRANSISTOR | SHANTOU HUASHAN ELECTRONIC DEVICES |
H558 | NPN SILICON TRANSISTOR | SHANTOU HUASHAN ELECTRONIC DEVICES |
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