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PDF ( 数据手册 , 数据表 ) H556

零件编号 H556
描述 PNP Silicon Transistor
制造商 Shantou Huashan Electronic
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H556 数据手册, 描述, 功能
Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSISTOR
H556
SWITCHING AND AMPLIFIER
ABSOLUTE MAXIMUM RATINGS Ta=25
TO-92
Tstg Storage Temperature
-55~150
Tj Junction Temperature
150
PC Collector Dissipation
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
500mW
-80V
-65V
1 Collector C
2 Base B
3 Emitter E
VEBO Emitter-Base Voltage
-5V
IC Collector Current
-100mA
ELECTRICAL CHARACTERISTICS Ta=25
Symbol
ICBO
HFE
VCE(sat1)
VCE(sat2)
VBE(sat1)
VBE(sat2)
VBE(ON)
fT
NF
Characteristics
Min Typ Max Unit
Test Conditions
Collector Cut-off Current
-15 nA
VCB=-30V, IE=0
DC Current Gain
110 800
VCE=-5V, IC=-2mA
Collector- Emitter Saturation Voltage
-90 -300 mV IC=-10mA, IB=-0.5mA
-250 -650 mV IC=-100mA, IB=-5mA
Base-Emitter Saturation Voltage
-0.7
V IC=-10mA, IB=-0.5mA
-0.9
V IC=-100mA, IB=-5mA
Base-Emitter On Voltage
-600 -660 -750 mV VCE=-5V, IC=-2mA
Current Gain-Bandwidth Product
150 MHz VCE=-5V, IC=-10mA
f=100MHz
Noise Figure
2 10 dB VCE=-5V, IC=-200 A
f=1KHz Rg=2K
hFE Classification
A
110 220
B
200 450
C
420 800












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