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PDF ( 数据手册 , 数据表 ) SE103

零件编号 SE103
描述 LightCharger 2.5 Gb/s Transimpedance Amplifier Final
制造商 SiGe Semiconductor Inc.
LOGO SiGe Semiconductor  Inc. LOGO 


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SE103 数据手册, 描述, 功能
SE1030W
LightCharger2.5 Gb/s Transimpedance Amplifier
Final
Applications
§ SONET/SDH-based transmission systems, test
equipment and modules
§ OC-48 fibre optic modules and line termination
§ ATM optical receivers
§ Gigabit Ethernet
§ Fibre Channel
Features
§ Single +3.3 V power supply
§ Input noise current = 360 nA rms when used with
a 0.5 pF detector
§ Transimpedance gain = 2.3 kinto a 50 load
(differential)
§ On-chip automatic gain control gives input
current overload of 2.6 mA pk and max output
voltage swing of 300 mV pk-pk
§ Differential 50 outputs
§ Bandwidth (-3 dB) = 2.4 GHz
§ Wide data rate range = 50 Mb/s to 2.5 Gb/s
§ Constant photodiode reverse bias voltage = 1.5 V
(anode to input, cathode to VCC)
§ Minimal external components, supply decoupling
only
§ Operating junction temperature range = -40°C to
+125°C
§ Equivalent to Nortel Networks AB89-A2A
Ordering Information
Type
SE1030W
Package
Bare Die
Remark
Shipped in
Waffle Pack
Functional Block Diagram
Product Description
SiGe Semiconductor offers a portfolio of optical
networking ICs for use in high-performance optical
transmitter and receiver functions, from 155 Mb/s up
to 12.5 Gb/s.
SiGe Semiconductor’s SE1030W is a fully integrated,
silicon bipolar transimpedance amplifier; providing
wideband, low noise preamplification of signal current
from a photodetector. It features differential outputs,
and incorporates an automatic gain control
mechanism to increase dynamic range, allowing input
signals up to 2.6 mA peak. A decoupling capacitor on
the supply is the only external circuitry required. A
system block diagram is shown after the functional
description, on page 3.
Noise performance is optimized for 2.5 Gb/s
operation, with a calculated rms noise based
sensitivity of –26 dBm for 10-10 bit error rate, achieved
using a detector with 0.5 pF capacitance and a
responsivity of 0.9 A/W, with an infinite extinction ratio
source.
SE1030
TzAmp
2.5 Gb/s
VCC or +ve supply
Automatic Gain Control
Integrator
Rectifier
Input
Current
TZ_IN
Rf
Tz Amp
Bandgap
Reference
Output
Driver
50
50
OUTP
OUTN
43-DST-01 § Rev 1.5 § May 24/02
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SE103 pdf, 数据表
SE1030W
LightCharger2.5 Gb/s Transimpedance Amplifier
Final
Applications Information
Note that all VCC pads (1, 8, 11) are connected on-chip, as are the VEE1 pads (5, 6, 7), and only one pad of each
type is required to be bonded out. However, in order to minimize inductance for optimum high speed performance, it
is recommended that all power pads are wire bonded. The VEE2 pad is not connected on chip to VEE1 and must be
bonded out separately.
+3.3 V
1 nF min
PIN
PIN Bias
1 8 11
VCC
3 TZ_IN
TZ Amplifier
SE1030W
10
OUTP
OUTN 9
VEE2
4
VEE1
5 67
1 nF min
To 50 O loads,
AC coupled
0V
43-DST-01 § Rev 1.5 § May 24/02
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