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PDF ( 数据手册 , 数据表 ) SE1000W

零件编号 SE1000W
描述 LightChargerTM155 Mb/s Transimpedance Amplifier Final
制造商 SiGe Semiconductor Inc.
LOGO SiGe Semiconductor  Inc. LOGO 


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SE1000W 数据手册, 描述, 功能
SE1000W
LightChargerTM155 Mb/s Transimpedance Amplifier
Final
Applications
§ SONET/SDH-based transmission systems, test
equipment and modules
§ OC-3 fibre optic modules and line termination
§ ATM and FDDI optical receivers
Features
§ Single +5 V power supply
§ Input noise current = 12 nA rms when used with a
0.5 pF detector
§ Transimpedance gain = 15 kinto a 50 load
(single -ended)
§ On-chip automatic gain control gives input
current overload of 2.6 mA pk and max output
voltage swing of 300 mV pk-pk
§ 50 single-ended or 100 differential wire bond
selectable outputs
§ Bandwidth (-3 dB) = 150 MHz (min)
§ Wide data rate range = 10 Mb/s to 155 Mb/s
§ High input bias level = 2 V
§ Minimal external components, supply decoupling
only
§ Operating junction temperature range = -40°C to
+95°C
§ Equivalent to Nortel Networks AB52
Ordering Information
Type
SE1000W
Package
Bare Die
Remark
Shipped in
Waffle Pack
Functional Block Diagram
Product Description
SiGe Semiconductor offers a portfolio of optical
networking ICs for use in high-performance optical
transmitter and receiver functions, from 155 Mb/s up
to 12.5 Gb/s.
SiGe Semiconductor’s SE1000W is a fully integrated,
silicon bipolar transimpedance amplifier; providing
wideband, low noise preamplification of signal current
from a photodetector. It features single-ended or
differential outputs, selectable by wire bond options,
and incorporates an automatic gain control
mechanism to increase dynamic range, allowing input
signals up to 2.6 mA peak. For differential outputs, a
decoupling capacitor on the supply is the only
external circuitry required.
Noise performance is optimized for 155 Mb/s
operation, with a calculated rms noise based
sensitivity of –41 dBm for 10-10 bit error rate, achieved
using a detector with 0.5 pF capacitance and a
responsivity of 0.95 A/W, with an infinite extinction
ratio source.
SE1000
TzAmp
155 Mb/s
Automatic Gain Control
Integrator Rectifier
TZ_IN
Input
Current
Rf
Tz Amp
Bandgap
Reference
GND or –ve supply
40-DST-01 § Rev 1.5 § May 24/02
Output
Driver
50
50
Power
Supply
Rejection
50
OUTP
OUTN
ACGND
Wire bond option for single-ended operation
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SE1000W pdf, 数据表
SE1000W
LightChargerTM155 Mb/s Transimpedance Amplifier
Final
Applications Information
For optimum performance it is recommended that the device be used in differential mode with the circuit shown in the
first diagram below.
Note that the two VCC1 pads (2, 10) are connected on-chip, as are the VEE1 pads (6, 7), and only one pad of each
type is required to be bonded out. However, in order to minimize inductance for optimum high speed performance, it
is recommended that all power pads are wire bonded. The VEE2 and VCC2 pads are not connected on chip to VEE1
and VCC1 respectively, and must be bonded out separately.
Connections for differential operation:
+5 V
PIN
0 V or
–ve bias
1
VCC2
2 10
VCC1
3 TZ_IN
TZ Amplifier
SE1000W
VEE2
4
VEE1
67
0V
1 nF min
9
OUTP
OUTN 8
ACGND
5
NC
To 50 O loads,
AC coupled
Connections for single-ended operation:
+5 V
PIN
0 V or
–ve bias
1
VCC2
2 10
VCC1
3 TZ_IN
TZ Amplifier
SE1000W
VEE2
4
VEE1
67
0V
1 nF min
9
OUTP
OUTN 8
ACGND
5
1 nF
To 50 O load,
AC coupled
NC
40-DST-01 § Rev 1.5 § May 24/02
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零件编号描述制造商
SE1000WLightChargerTM155 Mb/s Transimpedance Amplifier FinalSiGe Semiconductor  Inc.
SiGe Semiconductor Inc.

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