DataSheet8.cn


PDF ( 数据手册 , 数据表 ) NE32484A-T1A

零件编号 NE32484A-T1A
描述 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
制造商 NEC
LOGO NEC LOGO 


1 Page

No Preview Available !

NE32484A-T1A 数据手册, 描述, 功能
DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE32484A
C to Ku BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
DESCRIPTION
The NE32484A is a Hetero Junction FET that utilizes the
hetero junction to create high mobility electrons. Its excellent
low noise and high associated gain make it suitable for DBS,
TVRO and another commercial systems.
FEATURES
• Super Low Noise Figure & High Associated Gain
NF = 0.6 dB TYP., Ga = 11.0 dB TYP. at f = 12 GHz
• Gate Length : Lg 0.25 µm
• Gate Width : Wg = 200 µm
ORDERING INFORMATION
PART NUMBER
NE32484A-SL
NE32484A-T1
NE32484A-T1A
SUPPLYING
FORM
STICK
Tape & reel
1000 pcs./reel
Tape & reel
5000 pcs./reel
LEAD LENGTH MARKING
L = 1.7 mm MIN.
L = 1.0 ± 0.2 mm
L = 1.0 ± 0.2 mm
T
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDS
4.0
V
Gate to Source Voltage
VGS
–3.0
V
Drain Current
ID
IDSS
mA
Gate Current
IG 100 µA
Total Power Dissipation
Ptot
165
mW
Channel Temperature
Tch 150 ˚ C
Storage Temperature
Tstg –65 to +150 ˚ C
RECOMMENDED OPERATING CONDITION (TA = 25 ˚C)
PACKAGE DIMENSIONS
(Unit: mm)
1.78 ±0.2
1
L
L
T
2
4
L
3
L
0.5 TYP.
1. Source
2. Drain
3. Source
4. Gate
CHARACTERISTIC
Drain to Source Voltage
Drain Current
Input Power
SYMBOL
VDS
ID
Pin
MIN.
TYP.
2
10
MAX.
3
20
0
Unit
V
mA
dBm
Document No. P11785EJ3V0DS00 (3rd edition)
(Previous No. TC-2316)
Date Published July 1996 P
Printed in Japan
©
1991







NE32484A-T1A pdf, 数据表
NE32484A
RECOMMENDED SOLDERING CONDITIONS
The following conditions (see table below) must be met when soldering this product.
Please consult with our sales offices in case other soldering process is used, or in case soldering is done under
different conditions.
<TYPES OF SURFACE MOUNT DEVICE>
For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL”
(C10535EJ7V0IF00).
Soldering process
Infrared ray reflow
Partial heating method
Soldering conditions
Peak package’s surface temperature: 230 ˚C or below,
Reflow time: 30 seconds or below (210 ˚C or higher),
Number of reflow process: 1, Exposure limitNote: None
Terminal temperature: 230 ˚C or below,
Flow time: 10 seconds or below,
Exposure limitNote: None
Symbol
IR30-00
Note Exposure limit before soldering after dry-pack package is opened.
Storage conditions: 25 ˚C and relative humidity at 65 % or less.
Caution Do not apply more than a single process at once, except for “Partial heating method”.
PRECAUTION Avoid high static voltage and electric fields, because this device is Hetero Junction field effect
transistor with shottky barrier gate.
Caution
The Great Care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (Gallium Arsenide), which is
designated as harmful substance according to the law concerned.
Keep the Japanese law concerned and so on, especially in case of removal.
8














页数 12 页
下载[ NE32484A-T1A.PDF 数据手册 ]


分享链接

Link :

推荐数据表

零件编号描述制造商
NE32484A-T1C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FETNEC
NEC
NE32484A-T1AC to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FETNEC
NEC

零件编号描述制造商
STK15C88256-Kbit (32 K x 8) PowerStore nvSRAMCypress Semiconductor
Cypress Semiconductor
NJM4556DUAL HIGH CURRENT OPERATIONAL AMPLIFIERNew Japan Radio
New Japan Radio
EL1118-G5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLEREverlight
Everlight


DataSheet8.cn    |   2020   |  联系我们   |   搜索  |  Simemap