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零件编号 | NE02107 | ||
描述 | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR | ||
制造商 | ETC | ||
LOGO | |||
1 Page
NEC's NPN SILICON HIGH NE021
FREQUENCY TRANSISTOR SERIES
FEATURES
• HIGH INSERTION GAIN: 18.5 dB at 500 MHz
• LOW NOISE FIGURE: 1.5 dB at 500 MHz
• HIGH POWER GAIN: 12 dB at 2 GHz
• LARGE DYNAMIC RANGE: 19 dBm at 1 dB,
2 GHz Gain Compression
DESCRIPTION
b e r sNEC's NE021 series of NPN silicon transistors provides eco-
P L E A S E N O T E : p a r t n u mnomical solutions to wide ranges of amplifier and oscillator
problems. Low noise and high current capability provide low
T h e f o l l o wdi nagt a s h e e t a r eintermodulation distortion. The NE021 series is available as a
chip or in several package styles. The series uses the NEC
gold, platinum, titanium, and platinum-silicide metallization
system to provide the utmost in reliability. NE02107 is avail-
able in both common-base and common-emitter configura-
tions and has been qualified for high-reliability space applica-
f r o m t h i s o t i v e :tions.
n o n p rNoEm0 2 1 0 0NE02135
TYPICAL NOISE PARAMETERS (TA = 25°C)
N E 0 2 1 3 3 b e r sFREQ.
(MHz)
NFOPT
(dB)
GA
(dB)
ΓOPT
MAG ANG
Rn/50
N E 0 2 1 3 9 p a r t n u mVCE = 10 V, IC = 5 mA
T h e f o l l o wdi nagt a s h e e t a r e500 1.2 18.60 .36 69 .14
1000
1.5 13.82 .31 124 .12
1500
2.0 11.83 .50 165 .05
2000
2.4
9.36 .44
-175
.06
2500
2.6
7.82 .52
-161
.10
t h i s3000
3.6
7.51 .68
-141
.14
fdr oi smc o n t i n u e d :3500
3.7
6.31 .71
-139
.21
VCE = 10 V, IC = 20 mA
N E 0 2 1 0 7 f o r500 1.8 21.32 .16 149 .15
N E 0 2 1 3 5 office1000
1.9 16.15 .33 169 .13
1500
2.4 13.50 .46
-179
.09
c a l l s a l e s2000
2.9 11.02 .53
-167
.08
2500
3.2
9.12 .57
-154
.14
3000
3.9
8.10 .62
-139
.27
dPelet aasi les .3500
4.3
6.48 .67
-134
.42
00 (CHIP)
07/07B
33 (SOT 23 STYLE)
35 (MICRO-X)
39 (SOT 143 STYLE)
NE02139
TYPICAL NOISE PARAMETERS (TA = 25°C)
FREQ.
(MHz)
NFOPT
(dB)
GA
(dB)
VCE = 10 V, IC = 20 mA
500 1.8 17.5
1000
2.1 12.5
1500
2.3 9.5
2000
2.6 7.5
ΓOPT
MAG ANG
0.11 156
0.27 168
0.36 -156
0.43 -147
Rn/50
.20
.16
.18
.21
California Eastern Laboratories
NE021 SERIES
TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = 25°C)
j50
j25 j100
j10
0 10
-j10
S11
2 GHz
25 50 100
0
S22
2 GHz
S22
S11 0.1 GHz
0.1 GHz
-j25 -j100
-j50
120˚
S21
150˚ 0.1 GHz
90˚
60˚
S12
2 GHz
30˚
Coordinates in Ohms
Frequency in GHZ
(VCE = 10 V, IC = 20 mA)
180˚
-150˚
-120˚
S12 S21
0.1 GHz 2 GHz
0.6 .12 .18 .24 .30 0˚
3
8
12 -30˚
16
S21 20
-90˚
-60˚
NE02133
VCE = 10 V, IC = 5 mA
FREQUENCY
S11
(MHz)
MAG ANG
100
200
500
1000
1500
2000
.80 -37
.63 -63
.37 -114
.27 -158
.27 172
.29 151
VCE = 10 V, IC = 10 mA
100 .66 -48
200 .46 -78
500 .27 -129
1000
.21 -169
1500
.23 165
2000
.26 146
VCE = 10 V, IC = 20 mA
100 .51 -61
200 .33 -91
500 .21 -143
1000
.19 -177
1500
.21 160
2000
.24 142
S21
MAG ANG
13.53
10.48
5.56
3.02
2.16
1.74
150
129
99
76
63
49
19.53
13.52
6.29
3.31
2.35
1.87
139
118
93
74
62
50
19.37
15.04
6.57
3.41
2.41
1.92
129
109
89
72
61
49
S12
MAG ANG
.03 73
.04 59
.09 61
.15 60
.21 63
.27 58
.02 79
.03 58
.09 67
.16 66
.23 64
.29 59
.02 79
.03 64
.08 71
.16 69
.24 67
.30 59
S22
MAG ANG
.91 -18
.72 -29
.48 -38
.40 -41
.34 -49
.31 -62
.81 -27
.58 -35
.38 -36
.34 -40
.29 -47
.26 -62
.70 -32
.48 -35
.33 -32
.32 -37
.26 -45
.23 -59
K
0.178
0.477
0.795
0.988
1.039
1.031
MAG1
(dB)
26.542
24.183
17.908
13.039
8.914
7.022
0.235
0.761
0.900
0.993
1.007
1.011
29.897
26.539
18.444
13.157
9.593
7.438
0.497
0.909
1.010
1.005
1.006
1.013
29.861
27.001
18.522
12.847
9.524
7.369
Note:
1. Gain Calculations:
( ).MAG = |S21| K ± K 2 - 1 When K ≤ 1, MAG is undefined and MSG values are used. MSG = |S21| , K = 1 + | ∆ | 2 - |S11| 2 - |S22| 2 , ∆ = S11 S22 - S21 S12
|S12|
|S12|
2 |S12 S21|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
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页数 | 12 页 | ||
下载 | [ NE02107.PDF 数据手册 ] |
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