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PDF ( 数据手册 , 数据表 ) N302AS

零件编号 N302AS
描述 N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
制造商 Fairchild
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N302AS 数据手册, 描述, 功能
April 2002
ISL9N302AS3ST
N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Applications
• DC/DC converters
Features
• Fast switching
• rDS(ON) = 0.0019(Typ), VGS = 10V
• rDS(ON) = 0.0027(Typ), VGS = 4.5V
• Qg (Typ) = 110nC, VGS = 5V
• Qgd (Typ) = 31nC
• CISS (Typ) = 11000pF
DRAIN
(FLANGE)
D
GATE
SOURCE
TO-263AB
G
S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 100oC, VGS = 4.5V)
Continuous (TC = 25oC, VGS = 10V, RθJA = 43oC/W)
Pulsed
PD
Power dissipation
Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Ratings
30
±20
75
75
28
Figure 4
345
2.3
-55 to 175
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-263
Thermal Resistance Junction to Ambient TO-263
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area
0.43
62
43
Package Marking and Ordering Information
Device Marking
N302AS
Device
ISL9N302AS3ST
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Units
V
V
A
A
A
A
W
W/oC
oC
oC/W
oC/W
oC/W
Quantity
800 units
©2002 Fairchild Semiconductor Corporation
Rev. B1,April 2002







N302AS pdf, 数据表
PSPICE Electrical Model
SUBCKT ISL9N302AS3ST 2 1 3 ; rev May 2001
CA 12 8 5e-9
Cb 15 14 5.5e-9
Cin 6 8 1e-8
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Dplcap 10 5 DplcapMOD
Ebreak 11 7 17 18 30.4
Eds 14 8 5 8 1
Egs 13 8 6 8 1
Esg 6 10 6 8 1
Evthres 6 21 19 8 1
Evtemp 20 6 18 22 1
It 8 17 1
Lgate 1 9 5.618e-9
Ldrain 2 5 1e-9
Lsource 3 7 1.98e-9
RLgate 1 9 56.1
RLdrain 2 5 15
RLsource 3 7 19.8
Mmed 16 6 8 8 MmedMOD
Mstro 16 6 8 8 MstroMOD
Mweak 16 21 8 8 MweakMOD
Rbreak 17 18 RbreakMOD 1
Rdrain 50 16 RdrainMOD 4e-4
Rgate 9 20 5.93e-1
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
Rsource 8 7 RsourceMOD 1.3e-3
Rvthres 22 8 RvthresMOD 1
Rvtemp 18 19 RvtempMOD 1
S1a 6 12 13 8 S1AMOD
S1b 13 12 13 8 S1BMOD
S2a 6 15 14 13 S2AMOD
S2b 13 15 14 13 S2BMOD
GATE
1
DPLCAP 5
10
RSLC2
RSLC1
51
5
51
ESLC
DBREAK
11
LDRAIN
DRAIN
2
RLDRAIN
- 50
+
ESG
6
8
+
RDRAIN
EVTHRES
16
17
EBREAK 18
-
LGATE
EVTEMP
+ 19 -
8
21
MWEAK
RGATE + 18 -
9 20 22
6
MMED
RLGATE
MSTRO
CIN
8
7
DBODY
LSOURCE
SOURCE
3
RSOURCE
RLSOURCE
S1A
12 13
8
S2A
14 15
13
RBREAK
17 18
S1B S2B
CA 13 CB
+ + 14
EGS
6
8
-
EDS
5
8
-
RVTEMP
19
IT -
VBAT
+
8
22
RVTHRES
Vbat 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*500),3))}
.MODEL DbodyMOD D (IS=2e-10 N=1.05 RS=1.8e-3 TRS1=9e-4 TRS2=1e-6 + CJO=4.9e-9 M=4.9e-1 TT=1e-13 XTI=0)
.MODEL DbreakMOD D (RS=2.5e-1 TRS1=1e-3 TRS2=-8.9e-6)
.MODEL DplcapMOD D (CJO=3.5e-9 IS=1e-30 N=10 M=4.7e-1)
.MODEL MstroMOD NMOS (VTO=2.1 KP=550 IS=1e-25 N=10 TOX=1 L=1u W=1u)
.MODEL MmedMOD NMOS (VTO=1.6 KP=30 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=5.93e-1)
.MODEL MweakMOD NMOS (VTO=1.22 KP=1e-1 IS=1e-40 N=10 TOX=1 L=1u W=1u RG=5.93 RS=1e-1)
.MODEL RbreakMOD RES (TC1=1e-3 TC2=-7e-7)
.MODEL RdrainMOD RES (TC1=1.2e-2 TC2=2.5e-5)
.MODEL RSLCMOD RES (TC1=3.5e-9 TC2=5e-6)
.MODEL RsourceMOD RES (TC1=1e-3 TC2=1e-6)
.MODEL RvthresMOD RES (TC1=-2.9e-3 TC2=-9e-6)
.MODEL RvtempMOD RES (TC1=-1.8e-3 TC2=1e-6)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.5 VOFF=-1.5)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-1.5 VOFF=-3.5)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-0.4 VOFF=0.1)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=0.1 VOFF=-0.4)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
©2002 Fairchild Semiconductor Corporation
Rev. B1 April 2002














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