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PDF ( 数据手册 , 数据表 ) PN168

零件编号 PN168
描述 Silicon NPN Phototransistor
制造商 Panasonic Semiconductor
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PN168 数据手册, 描述, 功能
Phototransistors
PNA1801L (PN168)
Silicon NPN Phototransistor
For optical control systems
Features
High sensitivity
Wide spectral sensitivity, suited for detecting GaAs LEDs
Small size, high output power, low cost
ø 3 plastic package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
VCEO
VECO
IC
PC
Topr
Tstg
Ratings
30
5
20
100
–25 to +85
–30 to +100
Unit
V
V
mA
mW
˚C
˚C
ø3.8±0.2
ø3.0±0.2
Unit : mm
2-0.8 max.
2-0.5±0.1
2
1
2.54
0.5±0.1
1: Emitter
2: Collector
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min
Dark current
Collector photo current
Peak sensitivity wavelength
Acceptance half angle
ICEO
ICE(L)
λP
θ
VCE = 10V
VCE = 10V, L = 500 lx*1
VCE = 10V
Measured from the optical axis to the half power point
0.8
Response time
Collector saturation voltage
tr, tf*2
VCE(sat)
VCC = 10V, ICE(L) = 1mA, RL = 100
ICE(L) = 1mA, L = 1000 lx*1
*1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2 Switching time measurement circuit
typ
0.005
3
800
35
4
0.2
max
0.5
0.5
Unit
µA
mA
nm
deg.
µs
V
Sig.IN
50
VCC
(Input pulse)
Sig.OUT
RL
(Output pulse) td
tr
90%
10%
tf
td : Delay time
tr : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
Note) The part number in the parenthesis shows conventional part number.
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