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PDF ( 数据手册 , 数据表 ) 93AA76-P

零件编号 93AA76-P
描述 8K/16K 1.8V Microwire Serial EEPROM
制造商 Microchip Technology
LOGO Microchip Technology LOGO 


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93AA76-P 数据手册, 描述, 功能
93AA76/86
8K/16K 1.8V Microwire® Serial EEPROM
FEATURES
• Single supply operation down to 1.8V
• Low power CMOS technology
- 1 mA active current typical
- 5 µA standby current (typical) at 3.0V
• ORG pin selectable memory configuration
- 1024 x 8 or 512 x 16-bit organization
(93AA76)
- 2048 x 8 or 1024 x 16-bit organization
(93AA86)
• Self-timed ERASE and WRITE cycles
• Automatic ERAL before WRAL
• Power on/off data protection circuitry
• Industry standard 3-wire serial I/O
• Device status signal during ERASE/WRITE cycles
• Sequential READ function
• 10,000,000 ERASE/WRITE cycles guaranteed
• Data retention > 200 years
• 8-pin PDIP/SOIC package
• Temperature ranges available:
- Commercial (C): 0°C to +70°C
DESCRIPTION
The Microchip Technology Inc. 93AA76/86 are 8K and
16K low voltage serial Electrically Erasable PROMs.
The device memory is configured as x8 or x16 bits
depending on the ORG pin setup. Advanced CMOS
technology makes these devices ideal for low power
non-volatile memory applications. These devices also
have a Program Enable (PE) pin to allow the user to
write protect the entire contents of the memory array.
The 93AA76/86 is available in standard 8-pin DIP and
8-pin surface mount SOIC packages.
PACKAGE TYPES
DIP Package
CS 1
CLK 2
DI 3
DO 4
8 VCC
7 PE
6 ORG
5 VSS
SOIC Package
CS 1
CLK 2
DI 3
DO 4
8 VCC
7 PE
6 ORG
5 VSS
BLOCK DIAGRAM
VCC VSS
Memory
Array
Address
Decoder
Data
Register
DI
Mode
PE
CS
Decode
Logic
CLK
Clock
Generator
Address
Counter
Output
Buffer
DO
Microwire is a registered trademark of National Semiconductor Incorporated.
© 1996 Microchip Technology Inc.
Preliminary
This document was created with FrameMaker 4 0 4
DS21130C-page 1







93AA76-P pdf, 数据表
93AA76/86
FIGURE 3-5: WRITE
CS
STANDBY
CLK
DI 1 0 1 AN ... A0 DN ... D0
DO HIGH IMPEDANCE
FIGURE 3-6: WRAL
BUSY
READY
TWC
TCZ
CS STANDBY
CLK
DI 1 0 0 0 1 X ... X DN ... D0
TCZ
HIGH IMPEDANCE
DO
BUSY READY
ORG=VCC, 8 X’s
ORG=VSS, 9 X’s
Guaranteed at Vcc = +4.5V to +6.0V.
TWL
FIGURE 3-7: ERASE
CS STANDBY
CLK
DI
DO
1 1 1 AN
HIGH IMPEDANCE
... ...
A0
BUSY
TWC
TCZ
READY
DS21130C-page 8
Preliminary
© 1996 Microchip Technology Inc.














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