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PDF ( 数据手册 , 数据表 ) MMSF7P03HD

零件编号 MMSF7P03HD
描述 SINGLE TMOS POWER MOSFET 30 VOLTS
制造商 Motorola Semiconductors
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MMSF7P03HD 数据手册, 描述, 功能
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMSF7P03HD/D
Designer's Data Sheet
Medium Power Surface Mount Products
TMOS Single P-Channel
Field Effect Transistors
Single HDTMOS are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density TMOS process.
HDTMOS devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in
portable and battery powered products such as computers,
printers, cellular and cordless phones. They can also be used for
low voltage motor controls in mass storage products such as disk
drives and tape drives.
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package — Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Mounting Information for SO–8 Package Provided
G
MMSF7P03HD
Motorola Preferred Device
SINGLE TMOS
POWER MOSFET
30 VOLTS
RDS(on) = 35 mW
D
S
CASE 751–05, Style 13
SO–8
Source
Source
Source
Gate
18
27
36
45
Top View
Drain
Drain
Drain
Drain
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25°C
Drain Current — Single Pulse (tp 10 µs)
Source Current — Continuous @ TA = 25°C
Total Power Dissipation @ TA = 25°C (1)
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy – STARTING TJ = 25°C
W(VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 32 Vdc, IL = 10 Apk, L = 10 mH, RG = 25 )
Thermal Resistance — Junction–to–Ambient
Maximum Temperature for Soldering
VDSS
VGS
ID
IDM
IS
PD
TJ, Tstg
EAS
30
± 20
7.0
50
2.3
2.5
– 55 to 150
5000
Vdc
Vdc
Adc
Apk
Adc
Watts
°C
mJ
RθJA
T
50 °C/W
260 °C
DEVICE MARKING
S7P03
(1) When mounted on 1 inch square FR–4 or G–10 (VGS = 10 V @ 10 seconds)
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MMSF7P03HDR2
13
12 mm embossed tape
2500 units
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Designer’s and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
REV 2
©MMoottoororolal,aInTc.M19O9S7 Power MOSFET Transistor Device Data
1







MMSF7P03HD pdf, 数据表
MMSF7P03HD
INFORMATION FOR USING THE SO–8 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must be
the correct size to ensure proper solder connection interface
between the board and the package. With the correct pad
geometry, the packages will self–align when subjected to a
solder reflow process.
0.060
1.52
0.275
7.0
0.155
4.0
0.024
0.6
0.050
1.270
inches
mm
SO–8 POWER DISSIPATION
The power dissipation of the SO–8 is a function of the input
pad size. This can vary from the minimum pad size for
soldering to the pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by TJ(max), the maximum rated junction
temperature of the die, RθJA, the thermal resistance from the
device junction to ambient; and the operating temperature, TA.
Using the values provided on the data sheet for the SO–8
package, PD can be calculated as follows:
PD =
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this case
is 1.6 Watts.
PD =
150°C – 25°C
80°C/W
= 1.6 Watts
The 80°C/W for the SO–8 package assumes the
recommended footprint on a glass epoxy printed circuit board
to achieve a power dissipation of 1.6 Watts using the footprint
shown. Another alternative would be to use a ceramic
substrate or an aluminum core board such as Thermal Clad.
Using board material such as Thermal Clad, the power
dissipation can be doubled using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
Always preheat the device.
The delta temperature between the preheat and soldering
should be 100°C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
When shifting from preheating to soldering, the maximum
temperature gradient shall be 5°C or less.
After soldering has been completed, the device should be
allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
8 Motorola TMOS Power MOSFET Transistor Device Data














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