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PDF ( 数据手册 , 数据表 ) MMBTH10LT1

零件编号 MMBTH10LT1
描述 VHF/UHF Transistor
制造商 ON
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MMBTH10LT1 数据手册, 描述, 功能
MMBTH10LT1,
MMBTH10−4LT1
Preferred Devices
VHF/UHF Transistor
NPN Silicon
Device Marking: 3EM
Device Marking:
Features
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
Characteristic
Symbol
Total Device Dissipation
FR−5 Board (Note 1)
TA = 25°C
Derate above 25°C
PD
Thermal Resistance,
Junction to Ambient (Note 1)
RθJA
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate above 25°C
PD
Thermal Resistance,
Junction to Ambient (Note 2)
RθJA
Junction and Storage
Temperature Range
TJ, Tstg
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
Value
25
30
3.0
Unit
Vdc
Vdc
Vdc
Max Unit
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4 mW/°C
417 °C/W
−55 to
+150
°C
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
CASE 318
SOT−23
STYLE 6
ORDERING INFORMATION
Device
Package
Shipping
MMBTH10LT1
MMBTH10LT1G
MMBTH10−4LT1
SOT−23
SOT−23
(Pb−Free)
SOT−23
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2003
December, 2003 − Rev. 2
1
Publication Order Number:
MMBTH10LT1/D












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