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PDF ( 数据手册 , 数据表 ) MMBD1201

零件编号 MMBD1201
描述 High Conductance Ultra Fast Diode
制造商 Fairchild
LOGO Fairchild LOGO 


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MMBD1201 数据手册, 描述, 功能
Discrete POWER & Signal
Technologies
MMBD1201 / 1203 / 1204 / 1205
3
SOT-23
3
24
12
2
1 MARKING
MMBD1201 24 MMBD1204A 27
MMBD1203 26 MMBD1205A 28
CONNECTION DIAGRAMS
1201
3
3 1203
1
1204
2 NC
3
12
3
1205
1 21 2
High Conductance Ultra Fast Diode
Sourced from Process 1P.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
W IV
IO
IF
if
if(surge)
Tstg
TJ
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
50
200
600
700
1.0
2.0
-55 to +150
150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
mA
mA
mA
A
A
°C
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
PD Total Device Dissipation
Derate above 25°C
RθJA Thermal Resistance, Junction to Ambient
MMBD1201/1203/1204/1205*
350
2.8
357
*Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2
Units
mW
mW /°C
°C/W
ã 1997 Fairchild Semiconductor Corporation












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