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PDF ( 数据手册 , 数据表 ) MJE13007

零件编号 MJE13007
描述 POWER TRANSISTOR 8.0 AMPERES 400 VOLTS 80/40 WATTS
制造商 Motorola Semiconductors
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MJE13007 数据手册, 描述, 功能
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MJE13007/D
Designer's Data Sheet
SWITCHMODE
NPN Bipolar Power Transistor
For Switching Power Supply Applications
The MJE/MJF13007 is designed for high–voltage, high–speed power switching
inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V
switchmode applications such as Switching Regulators, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.
VCEO(sus) 400 V
Reverse Bias SOA with Inductive Loads @ TC = 100°C
700 V Blocking Capability
SOA and Switching Applications Information
Two Package Choices: Standard TO–220 or Isolated TO–220
MJF13007 is UL Recognized to 3500 VRMS, File #E69369
MJE13007
MJF13007
POWER TRANSISTOR
8.0 AMPERES
400 VOLTS
80/40 WATTS
MAXIMUM RATINGS
Rating
Symbol MJE13007 MJF13007 Unit
Collector–Emitter Sustaining Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Voltage
Collector Current — Continuous
Collector Current — Peak (1)
Base Current — Continuous
Base Current — Peak (1)
Emitter Current — Continuous
Emitter Current — Peak (1)
RMS Isolation Voltage
(for 1 sec, R.H. < 30%, TA = 25°C)
Test No. 1 Per Fig. 15
Test No. 2 Per Fig. 16
Test No. 3 Per Fig. 17
Proper strike and creepage distance must
be provided
VCEO
VCES
VEBO
IC
ICM
IB
IBM
IE
IEM
VISOL
400
700
9.0
8.0
16
4.0
8.0
12
24
— 4500
— 3500
— 1500
Vdc
Vdc
Vdc
Adc
Adc
Adc
V
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD 80
40* Watts
0.64 0.32 W/°C
Operating and Storage Temperature
TJ, Tstg
– 65 to 150
°C
THERMAL CHARACTERISTICS
Thermal Resistance
— Junction to Case
— Junction to Ambient
RθJC
RθJA
°1.56°
°62.5°
°3.12°
°62.5°
°C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8from Case for 5 Seconds
TL
260 °C
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%.
*Measurement made with thermocouple contacting the bottom insulated mountign surface of the
*package (in a location beneath the die), the device mounted on a heatsink with thermal grease applied
*at a mounting torque of 6 to 8lbs.
CASE 221A–06
TO–220AB
MJE13007
CASE 221D–02
ISOLATED TO–220 TYPE
UL RECOGNIZED
MJF13007
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1







MJE13007 pdf, 数据表
MJE13007 MJF13007
CIRCUIT
Table 2. Applications Examples of Switching Circuits
LOAD LINE DIAGRAMS
SERIES SWITCHING
REGULATOR
A
VCC
VO
16 A
TC = 100°C
8A
TURN–ON
TURN–ON (FORWARD BIAS) SOA
ton 10 µs
DUTY CYCLE 10%
PD = 3200 W 2
300 V
TURN–OFF (REVERSE BIAS) SOA
1.5 V VBE(off) 9 V
DUTY CYCLE 10%
TURN–OFF
400 V 1
700 V 1
+ VCC
COLLECTOR VOLTAGE
Notes:
1 See AN569 for Pulse Power Derating Procedure.
TIME DIAGRAMS
IC
ton toff
t
TIME
VCE
VCC
t
TIME
FLYBACK
INVERTER
VCC
B
N
TURN–ON (FORWARD BIAS) SOA
16 A ton 10 µs
DUTY CYCLE 10%
IC
TC = 100°C
PD = 3200 W 2
toff
VO
8A
300 V
TURN–OFF (REVERSE BIAS) SOA
1.5 V VBE(off) 9 V
ton
t
TURN–OFF
DUTY CYCLE 10%
LEAKAGE SPIKE
VCE
TURN–ON
+ VCC
VCC + N (Vo)
+ LEAKAGE
SPIKE
400 V 1
700 V 1
Notes:
VCC + N (Vo)
COLLECTOR VOLTAGE
1 See AN569 for Pulse Power Derating Procedure.
VCC +
N (Vo)
VCC
t
PUSH–PULL
INVERTER/CONVERTER
C
VCC
VO
SOLENOID DRIVER
VCC
D SOLENOID
16 A
TC = 100°C
8A
TURN–ON (FORWARD BIAS) SOA
ton 10 µs
DUTY CYCLE 10%
PD = 3200 W 2
TURN–ON
300 V
TURN–OFF (REVERSE BIAS) SOA
1.5 V VBE(off) 9 V
DUTY CYCLE 10%
IC
ton
VCE
2 VCC
toff
t
+ TURN–OFF
VCC 400 V 1
2 VCC
700 V 1
COLLECTOR VOLTAGE
Notes:
1 See AN569 for Pulse Power Derating Procedure.
VCC
16 A
TC = 100°C
8A
TURN–OFF
TURN–ON
TURN–ON (FORWARD BIAS) SOA
ton 10 µs
DUTY CYCLE 10%
PD = 3200 W 2
300 V
TURN–OFF (REVERSE BIAS) SOA
1.5 V VBE(off) 9 V
DUTY CYCLE 10%
IC
VCE
VCC
ton
+
VCC 400 V 1
700 V 1
COLLECTOR VOLTAGE
Notes:
1 See AN569 for Pulse Power Derating Procedure.
t
toff
t
t
8 Motorola Bipolar Power Transistor Device Data














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