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PDF ( 数据手册 , 数据表 ) 7MBP75RA120

零件编号 7MBP75RA120
描述 IGBT-IPM(1200V/75A)
制造商 Fuji Electric
LOGO Fuji Electric LOGO 


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7MBP75RA120 数据手册, 描述, 功能
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7MBP75RA120
IGBT-IPM R series
1200V / 75A 7 in one-package
Features
· Temperature protection provided by directly detecting the junction
temperature of the IGBTs
· Low power loss and soft switching
· Compatible with existing IPM-N series packages
· High performance and high reliability IGBT with overheating protection
· Higher reliability because of a big decrease in number of parts in
built-in control circuit
Maximum ratings and characteristics
Absolute maximum ratings(at Tc=25°C unless otherwise specified)
Item
Symbol
DC bus voltage
DC bus voltage (surge)
DC bus voltage (short operating)
Collector-Emitter voltage
DB Reverse voltage
INV Collector current
DC
1ms
DC
Collector power dissipation One transistor
DB Collector current
DC
1ms
Forward current of Diode
Collector power dissipation One transistor
Junction temperature
Input voltage of power supply for Pre-Driver
Input signal voltage
Input signal current
Alarm signal voltage
Alarm signal current
Storage temperature
Operating case temperature
Isolating voltage (Case-Terminal)
Screw torque
Mounting (M5)
Terminal (M5)
VDC
VDC(surge)
VSC
VCES
VR
IC
ICP
-IC
PC
IC
ICP
IF
PC
Tj
VCC *1
Vin *2
Iin
VALM *3
IALM *4
Tstg
Top
Viso *5
Rating
Unit
Min. Max.
0 900 V
0 1000 V
200 800 V
0 1200 V
- 1200 V
- 75 A
- 150 A
- 75 A
- 500 W
- 25 A
- 50 A
- 25 A
- 198 W
- 150 °C
0 20 V
0 Vz V
- 1 mA
0 Vcc V
- 15 mA
-40 125 °C
-20 100 °C
- AC2.5 kV
- 3.5 *6 N·m
- 3.5 *6 N·m
*1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.
*2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 12,13,14,15 and 10.
*3 Apply VALM between terminal No. 16 and 10.
*4 Apply IALM to terminal No. 16.
*5 50Hz/60Hz sine wave 1 minute.
*6 Recommendable Value : 2.5 to 3.0 N·m
Fig.1 Measurement of case temperature
Electrical characteristics of power circuit (at Tc=Tj=25°C, Vcc=15V)
Item
INV Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of FWD
DB Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of Diode
Symbol
ICES
VCE(sat)
VF
ICES
VCE(sat)
VF
Condition
VCE=1200V input terminal open
Ic=75A
-Ic=75A
VCE=1200V input terminal open
Ic=25A
-Ic=25A
Min.
Typ.
Max.
1.0
2.6
3.0
1.0
2.6
3.3
Unit
mA
V
V
mA
V
V







7MBP75RA120 pdf, 数据表
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7MBP75RA120
Brake
C ollecto r cu rren t vs. C ollec tor-Em itte r vo ltage
T j= 2 5 ° C
40 Vcc=15V
Vcc=17V
35
Vcc=13V
30
25
20
15
10
5
0
0 0.5 1 1.5 2 2.5 3
Collector-Emitter voltage : Vce (V)
IGBT-IPM
Collector current vs. Collector-Emitter voltage
Tj=125°C
40 Vcc=15V
35 Vcc=17V
30 Vcc=13V
25
20
15
10
5
0
0 0.5 1 1.5 2 2.5 3
Collector-Emitter voltage : Vce (V)
Transient thermal resistance
1
IGBT
0.1
0.01
0.001
0.01 0.1
Pulse width :Pw (sec)
1
Power derating for IGBT
(per device)
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
Case Temperature : Tc (°C)
350
300
250
200
150
100
50
0
0
Reversed biased safe operating area
Vcc=15V,Tj 125°C
SCSOA
(non-repetitive pulse)
RBSOA
(Repetitive pulse)
200 400 600 800 1000 1200
Collector-Emitter voltage : Vce (V)
1400
Over current protection vs. Junction temperature
Vcc=15V
100
80
60
40
20
0
0 20 40 60 80 100 120 140
Junction temperature : Tj(°C)














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