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PDF ( 数据手册 , 数据表 ) 7MBP200RA060

零件编号 7MBP200RA060
描述 IGBT Module
制造商 Fuji Electric
LOGO Fuji Electric LOGO 


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7MBP200RA060 数据手册, 描述, 功能
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7MBP200RA060
IGBT-IPM R series
600V / 200A 7 in one-package
Features
· Temperature protection provided by directly detecting the junction
temperature of the IGBTs
· Low power loss and soft switching
· High performance and high reliability IGBT with overheating protection
· Higher reliability because of a big decrease in number of parts in
built-in control circuit
Maximum ratings and characteristics
Absolute maximum ratings(at Tc=25°C unless otherwise specified)
Item
Symbol
DC bus voltage
VDC
DC bus voltage (surge)
VDC(surge)
DC bus voltage (short operating)
VSC
Collector-Emitter voltage
VCES
DB Reverse voltage
VR
INV Collector current
DC IC
1ms
ICP
Duty=57.8% -IC
Collector power dissipation One transistor PC
DB Collector current
DC IC
1ms
ICP
Forward current of Diode
IF
Collector power dissipation One transistor PC
Junction temperature
Tj
Input voltage of power supply for Pre-Driver
VCC*1
Input signal voltage
Vin *2
Input signal current
Iin
Alarm signal voltage
VALM*3
Alarm signal current
IALM *4
Storage temperature
Tstg
Operating case temperature
Top
Isolating voltage (Case-Terminal)
Viso *5
Screw torque
Mounting (M5)
Terminal (M5)
Rating
Unit
Min. Max.
0 450 V
0 500 V
200 400 V
0 600 V
- 600 V
- 200 A
- 400 A
- 200 A
- 735 W
- 75 A
- 150 A
- 75 A
- 320 W
- 150 °C
0 20 V
0 Vz V
- 1 mA
0 Vcc V
- 15 mA
-40 125 °C
-20 100 °C
- AC2.5 kV
- 3.5 *6 N·m
- 3.5 *6 N·m
*1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.
*2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 12,13,14,15 and 10.
*3 Apply VALM between terminal No. 16 and 10.
*4 Apply IALM to terminal No. 16.
*5 50Hz/60Hz sine wave 1 minute.
*6 Recommendable Value : 2.5 to 3.0 N·m
Fig.1 Measurement of case temperature
Electrical characteristics of power circuit (at Tc=Tj=25°C, Vcc=15V)
Item
INV
DB
Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of FWD
Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of Diode
Symbol
ICES
VCE(sat)
VF
ICES
VCE(sat)
VF
Condtion
VCE=600V input terminal open
Ic=200A
-Ic=200A
VCE=600V input terminal open
Ic=75A
-Ic=75A
Min.
Typ.
Max.
1.0
2.8
3.0
1.0
2.8
3.3
Unit
mA
V
V
mA
V
V







7MBP200RA060 pdf, 数据表
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7MBP200RA060
Brake
IGBT-IPM
Collector current vs. Collector-Emitter voltage
Tj=25°C
120 Vcc=15V
Vcc=17V
100
Vcc=13V
80
60
40
20
0
0 0.5 1 1.5 2 2.5 3 3.5
Collector-Emitter voltage : Vce (V)
Transient thermal resistance
1
IGBT
0.1
0.01
0.001
0.01 0.1
Pulse width :Pw (sec)
1
Collector current vs. Collector-Emitter voltage
Tj=125°C
120 Vcc=15V
Vcc=17V
100
Vcc=13V
80
60
40
20
0
0 0.5 1 1.5 2 2.5 3 3.5
Collector-Emitter voltage : Vce (V)
750
675
600
525
450
375
300
225
150
75
0
0
Reversed biased safe operating area
Vcc=15V,Tj 125°C
SCSOA
(non-repetitive pulse)
RBSOA
(Repetitive pulse)
100 200 300 400 500 600
Collector-Emitter voltage : Vce (V)
700
Power derating for IG BT
(per device)
350
300
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
Case Tem perature : Tc (°C)
Over current protection vs. Junction temperature
Vcc=15V
200
150
100
50
0
0 20 40 60 80 100 120 140
Junction temperature : Tj(°C)














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