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PDF ( 数据手册 , 数据表 ) M93C06

零件编号 M93C06
描述 16Kbit / 8Kbit / 4Kbit / 2Kbit / 1Kbit and 256bit 8-bit or 16-bit wide
制造商 ST Microelectronics
LOGO ST Microelectronics LOGO 


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M93C06 数据手册, 描述, 功能
M93C86, M93C76, M93C66
M93C56, M93C46
16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide)
MICROWIRE® Serial Access EEPROM
FEATURES SUMMARY
s Industry Standard MICROWIRE Bus
s Single Supply Voltage:
4.5 to 5.5V for M93Cx6
2.5 to 5.5V for M93Cx6-W
1.8 to 5.5V for M93Cx6-R
s Dual Organization: by Word (x16) or Byte (x8)
s Programming Instructions that work on: Byte,
Word or Entire Memory
s Self-timed Programming Cycle with Auto-
Erase
s Ready/Busy Signal During Programming
s Speed:
1MHz Clock Rate, 10ms Write Time
(Current product, identified by process
identification letter F or M)
2MHz Clock Rate, 5ms Write Time (New
Product, identified by process
identification letter W or G or S)
s Sequential Read Operation
s Enhanced ESD/Latch-Up Behaviour
s More than 1 Million Erase/Write Cycles
s More than 40 Year Data Retention
Table 1. Product List
Reference
Part
Number
M93C86
M93C86 M93C86-W
M93C86-R
M93C76
M93C76 M93C76-W
M93C76-R
M93C66
M93C66 M93C66-W
M93C66-R
Reference
Part
Number
M93C56
M93C56 M93C56-W
M93C56-R
M93C46
M93C46 M93C46-W
M93C46-R
Figure 1. Packages
8
1
PDIP8 (BN)
8
1
SO8 (MN)
150 mil width
TSSOP8 (DW)
169 mil width
TSSOP8 (DS)
3x3mm² body size (MSOP)
UFDFPN8 (MB)
2x3mm² (MLP)
August 2004
1/31







M93C06 pdf, 数据表
M93C86, M93C76, M93C66, M93C56, M93C46
Read
The Read Data from Memory (READ) instruction
outputs data on Serial Data Output (Q). When the
instruction is received, the op-code and address
are decoded, and the data from the memory is
transferred to an output shift register. A dummy 0
bit is output first, followed by the 8-bit byte or 16-
bit word, with the most significant bit first. Output
data changes are triggered by the rising edge of
Serial Clock (C). The M93Cx6 automatically incre-
ments the internal address register and clocks out
the next byte (or word) as long as the Chip Select
Input (S) is held High. In this case, the dummy 0 bit
is not output between bytes (or words) and a con-
tinuous stream of data can be read.
Erase/Write Enable and Disable
The Erase/Write Enable (EWEN) instruction en-
ables the future execution of erase or write instruc-
tions, and the Erase/Write Disable (EWDS)
instruction disables it. When power is first applied,
the M93Cx6 initializes itself so that erase and write
instructions are disabled. After an Erase/Write En-
able (EWEN) instruction has been executed, eras-
ing and writing remains enabled until an Erase/
Write Disable (EWDS) instruction is executed, or
until VCC falls below the power-on reset threshold
voltage. To protect the memory contents from ac-
cidental corruption, it is advisable to issue the
Erase/Write Disable (EWDS) instruction after ev-
ery write cycle. The Read Data from Memory
(READ) instruction is not affected by the Erase/
Write Enable (EWEN) or Erase/Write Disable
(EWDS) instructions.
Figure 4. READ, WRITE, EWEN, EWDS Sequences
READ
S
D 1 1 0 An A0
Q
WRITE
S
D
Qn
ADDR
OP
CODE
DATA OUT
Q0
1 0 1 An A0 Dn
CHECK
STATUS
D0
Q
ERASE
WRITE
ENABLE
S
D
ADDR
OP
CODE
1 0 0 1 1 Xn X0
DATA IN
BUSY
READY
ERASE S
WRITE
DISABLE
D
1 0 0 0 0 Xn X0
OP
CODE
Note: For the meanings of An, Xn, Qn and Dn, see Table 5., Table 6. and Table 7..
8/31
OP
CODE
AI00878C







M93C06 equivalent, schematic
M93C86, M93C76, M93C66, M93C56, M93C46
Table 17. DC Characteristics (M93Cx6-W, Device Grade 6)
Symbol
Parameter
Test Condition
ILI Input Leakage Current
0V VIN VCC
ILO Output Leakage Current
0V VOUT VCC, Q in Hi-Z
VCC = 5V, S = VIH, f = 1 MHz, Current
Product 1
ICC
Supply Current (CMOS
Inputs)
VCC = 2.5V, S = VIH, f = 1 MHz, Current
Product 1
VCC = 5V, S = VIH, f = 2 MHz, New
Product 2
VCC = 2.5V, S = VIH, f = 2 MHz, New
Product 2
ICC1 Supply Current (Stand-by)
VCC = 2.5V, S = VSS, C = VSS,
ORG = VSS or VCC, Current Product 1
VCC = 2.5V, S = VSS, C = VSS,
ORG = VSS or VCC, New Product 2
VIL Input Low Voltage (D, C, S)
VIH Input High Voltage (D, C, S)
VOL Output Low Voltage (Q)
VCC = 5V, IOL = 2.1mA
VCC = 2.5V, IOL = 100µA
VOH Output High Voltage (Q)
VCC = 5V, IOH = 400µA
VCC = 2.5V, IOH = 100µA
Note: 1. Current product: identified by Process Identification letter F or M.
2. New product: identified by Process Identification letter W or G or S.
Min.
0.45
0.7 VCC
2.4
VCC0.2
Max.
±2.5
±2.5
Unit
µA
µA
1.5 mA
1 mA
2 mA
1 mA
10 µA
5 µA
0.2 VCC
VCC + 1
0.4
0.2
V
V
V
V
V
V
16/31










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