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零件编号 | MG100Q2YS51 | ||
描述 | N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS) | ||
制造商 | Toshiba | ||
LOGO | |||
1 Page
TOSHIBA GTR Module Silicon N Channel IGBT
MG100Q2YS51
MG100Q2YS51
High Power Switching Applications
Motor Control Applications
Unit: mm
l High input impedance
l High speed : tf = 0.3µs (Max)
@Inductive load
l Low saturation voltage
: VCE (sat) = 3.6V (Max)
l Enhancement-mode
l Includes a complete half bridge in one package.
l The electrodes are isolated from case.
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
JEDEC
EIAJ
TOSHIBA
Weight: 430g
Characteristic
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1ms
Forward current
DC
1ms
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque (Terminal / mounting)
Symbol
VCES
VGES
IC
(25°C / 80°C)
ICP
(25°C / 80°C)
IF
IFM
PC
Tj
Tstg
VIsol
―
Rating
1200
±20
150 / 100
300 / 200
100
200
660
150
−40 ~ 125
2500
(AC 1 min.)
3/3
Unit
V
V
A
A
W
°C
°C
V
N·m
―
―
2-109C4A
1 2001-04-16
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页数 | 7 页 | ||
下载 | [ MG100Q2YS51.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
MG100Q2YS50 | N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS) | Toshiba |
MG100Q2YS50A | N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS) | Toshiba |
MG100Q2YS51 | N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS) | Toshiba |
MG100Q2YS51A | N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS) | Toshiba |
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