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PDF ( 数据手册 , 数据表 ) MG100Q2YS42

零件编号 MG100Q2YS42
描述 N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS)
制造商 Toshiba
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MG100Q2YS42 数据手册, 描述, 功能
TOSHIBA GTR Module Silicon N Channel IGBT
MG100Q2YS42
MG100Q2YS42
High Power Switching Applications
Motor Control Applications
l High input impedance
l High speed : tf = 0.5µs (max)
trr = 0.5µs (max)
l Low saturation voltage
: VCE (sat) = 4.0V (max)
l Enhancement-mode
l Includes a complete half bridge in one package.
l The electrodes are isolated from case.
Equivalent Circuit
JEDEC
JEITA
TOSHIBA
Weight: 430g (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1ms
Forward current
DC
1ms
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque (Terminal / mounting)
Symbol
VCES
VGES
IC
ICP
IF
IFM
PC
Tj
Tstg
VIsol
Rating
1200
±20
100
200
100
200
700
150
40 ~ 125
2500
(AC 1 min.)
3/3
Unit
V
V
A
A
W
°C
°C
V
N·m
2-109C1A
1 2001-08-16












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