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零件编号 | MA129 | ||
描述 | Rectifier Diodes | ||
制造商 | Panasonic | ||
LOGO | |||
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Rectifier Diodes
MA6X129 (MA129)
Silicon epitaxial planar type
For small power current rectification
I Features
• Three isolated elements contained in one package, allowing high-
density mounting
• Allowing high voltage rectification
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Reverse voltage (DC)
VR 200
Peak reverse voltage
VRM
200
Output current Single IO 100
Triple
200
Repetitive peak Single IFRM 200
forward current Triple
600
Non-repetitive peak Single
forward surge current* Triple
IFSM
350
1 000
Junction temperature
Storage temperature
Tj 150
Tstg −55 to +150
Note) * : t = l s
Unit
V
V
mA
mA
mA
°C
°C
2.90+–00..0250
1.9±0.1
(0.95) (0.95)
456
32
0.30+–00..0150
0.50+–00..0150
10°
1
Unit : mm
0.16+–00..0160
1: Cathode 1 4: Anode 1
2: Cathode 2 5: Anode 2
3: Cathode 3 6: Anode 3
Mini6-G1 Package
Marking Symbol: M4F
Internal Connection
61
52
43
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
IR
VF
Ct
Note) Rated input/output frequency: 3 MHz
Conditions
VR = 200 V
IF = 200 mA
VR = 0 V, f = 1 MHz
Min Typ Max Unit
0.2 µA
1.2 V
4.5 pF
Note) The part number in the parenthesis shows conventional part number.
223
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页数 | 4 页 | ||
下载 | [ MA129.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
MA120 | Diode (spec sheet) | American Microsemiconductor |
MA121 | Silicon epitaxial planar type | Panasonic |
MA122 | Silicon epitaxial planar type | Panasonic |
MA124 | Switching Diodes | Panasonic |
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