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PDF ( 数据手册 , 数据表 ) MA1113-1

零件编号 MA1113-1
描述 For PCS - 20W Power Amplifier
制造商 Mitsubishi Electric
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MA1113-1 数据手册, 描述, 功能
MA1113-1
For PCS - 20W Power Amplifier
DESCRIPTION
The MA1113-1 is a 20W power amplifier
designed for PCS, which comprises 4 stages
GaAs FET and 2 stages Si bipolar transistors,
also RF power monitoring circuit.
OUTLINE DRAWING
148 mm
142 mm
3 mm
FEATURES
sSpecified +25/+10 Volt Chracteristics
• RF Output Power : +43 dBm (typ.)
• Harmonics : –65 dBc typ.
sSmall Size : 77 × 148 × 40 mm3
s50 Ohm Input/Output Impedances
APPLICATION
sPCS (1930 ~ 1990 MHz)
Base station
MA1113-1
71 77
mm mm
3
mm
4 HOLES
φ 3.5 mm
Vg(–6V:PIN#12)
Vdet(PIN#13)
GND(PIN#11)
(out)
10 mm
RF IN
25 PINs D-SUB
RF OUT
40
mm
Vd(+10V:PIN#24) Vc(+25V:PIN#25)
MA1113-1
2. Electrical Performances (Tc = +25°C, Vc = +25V, Vd = +10V, Vg = –6V, Zg = Zl = 50)
No.
Items
Symbol
Condition
1 Frequency
f
2 Output Power
Pout
3 Output RF modulation – – – Pout = +43 dBm
spectrum ; from
the carrier 100 KHz
200 KHz
(Pin control)
250 KHz
400 KHz
600 KHz
to < 1200 KHz
1200 KHz
to < 1800 KHz
1800 KHz
to < 6000 KHz
=> 6000 KHz
4 Spurious ; in-band
out-band
5 Harmonics
2fo Pout = +43 dBm
3fo
4fo
6 Quiescent current
Icq Pin = 0mW
Standard
Min Type Max
1930 – – – 1990
+43 – – – – – –
Unit
MHz
dBm
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–60
–65
–70
–––
+0.5
–30
–33
–60
–70
–73
–75
–80
–36
–30
–––
–––
–––
1.5
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBc
dBc
dBc
A
Amplifier Specifications (MA1113-1)
1. Maximum Ratings
No. Items
1 Case temperature
2 Storage temperature
3 Collector Voltage
4 Drain Voltage
5 Gate Voltage
6 RF Input Power
Symbol
TC
Tstg
VC
Vd
Vg
Pin
Condition
Vg = –6V
Vd = +10V
Standard
–40 ~ +70
–40 ~ +80
+26.0
+11.5
–10.0
–9.0
Unit
°C
°C
V
V
V
dBm
– 96 –
– 97 –












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