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PDF ( 数据手册 , 数据表 ) MA02303GJ-SMB

零件编号 MA02303GJ-SMB
描述 RF Power Amplifier IC for 2.4 GHz ISM
制造商 Tyco
LOGO Tyco LOGO 


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MA02303GJ-SMB 数据手册, 描述, 功能
RF Power Amplifier IC
for 2.4 GHz ISM
Features
Perfect for 802.11B, HOP, SWAP, HOMERF,
Bluetooth, WDECT, MDS, MMDS
Single Positive Supply
Power Added Efficiency As High As 55 Percent
IP3 = +43 dBm
Output Power 26.5 dBm @ 3.3 V
Output Power 28.5 dBm @ 5.0 V
100 Percent Duty Cycle
2200 to 2600 MHz Operation
8 Pin MSOP Full Downset Plastic Package
Operates Over Wide Ranges of Supply Voltage
Self-Aligned MSAG®-Lite MESFET Process
Functional Schematic
PIN 1
PIN 8
Description
The MA02303GJ is an RF power amplifier based on
M/A-COM’s Self-Aligned MSAG® MESFET Process.
This product is designed for use in 2.4 GHz ISM
products. For booster applications, it features a low
power “bypass” mode and output power control
Ordering Information
Part Number
Description
MA02303GJ-R7
7 inch, 1000 piece reel
MA02303GJ-R13
13 inch, 3000 piece reel
MA02303GJ-SMB
Sample test board
PIN Configuration
PIN Function
1 VD1
2 RFIN / VG1
3 GND
4 VG2
5 VG3
6 GND
7 RFOUT / VD3
8 VD2
Description
Drain voltage, first stage
RF input and drain
voltage for first stage
Ground
Gate bias voltage,
second stage
Gate bias voltage,
third stage
Ground
RF output and drain
voltage for third stage
Drain voltage for
second stage
Package bottom is electrical and thermal ground
Absolute Maximum Ratings 1
Rating
Symbol Value
Unit
DC Supply Voltage
RF Input Power
Junction Temperature
Storage Temperature
VDD
PIN
TJ
TSTG
5.5
10
150
-40 to +150
V
mW
°C
°C
Operating Temperature TOPER -40 to +100
°C
Moisture Sensitivity
JEDEC Level 1
1. Beyond these limits, the device may be damaged or device reliability
reduced. Functional operation at absolute-maximum-rated conditions is
not implied.












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