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零件编号 | MC-4R128FKK8K | ||
描述 | 128MB 32-bit Direct Rambus DRAM RIMM Module | ||
制造商 | Elpida Memory | ||
LOGO | |||
1 Page
PRELIMINARY DATA SHEET
128MB 32-bit Direct Rambus DRAM RIMM Module
MC-4R128FKK8K (32M words × 18 bits × 2 channels)
Description
The 32-bit Direct Rambus RIMM module is a general-
purpose high-performance lines of memory modules
suitable for use in a broad range of applications
including computer memory, personal computers,
workstations, and other applications where high
bandwidth and latency are required.
The 32-bit RIMM module consists of 288Mb Direct
Rambus DRAM (Direct RDRAM) devices. These are
extremely high-speed CMOS DRAMs organized as
16M words by 18 bits. The use of Rambus Signaling
Level (RSL) technology permits the use of conventional
system and board design technologies. The 32-bit
RIMM modules support 800MHz transfer rate per pin,
resulting in total module bandwidth of 3.2GB/s.
Features
• 128MB Direct RDRAM storage and 128 banks total
on module
• 2 independent Direct RDRAM channels, 1 pass
through and 1 terminated on 32-bit RIMM module
• High speed 800MHz Direct RDRAM devices
• 232 edge connector pads with 1mm pad spacing
Module PCB size: 133.35mm × 39.925mm ×
1.27mm
Gold plated edge connector pads contacts
• Serial Presence Detect (SPD) support
• Operates from a 2.5V (±5%) supply
• Low power and power down self refresh modes
• Separate Row and Column buses for higher
efficiency
The 32-bit RIMM module provides two independent 18
bit memory channels to facilitate compact system
design. The "Thru" Channel enters and exits the
module to support a connection to or from a controller,
memory slot, or termination. The "Term" Channel is
terminated on the module and supports a connection
from a controller or another memory slot.
The RDRAM architecture enables the highest
sustained bandwidth for multiple, simultaneous,
randomly addressed memory transactions. The
separate control and data buses with independent row
and column control yield over 95% bus efficiency. The
RDRAM device multi-bank architecture supports up to
four simultaneous transactions per device.
Document No. E0252N10 (Ver. 1.0)
Date Published April 2002 (K) Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2002
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
MC-4R128FKK8K
Electrical Specifications
Absolute Maximum Ratings
Symbol
VI,ABS
VDD,ABS
TSTORE
Parameter
Voltage applied to any RSL or CMOS signal pad with
respect to GND
Voltage on VDD with respect to GND
Storage temperature
MIN.
−0.3
−0.5
−50
MAX.
VDD + 0.3
VDD + 1.0
+100
Unit
V
V
°C
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
DC Recommended Electrical Conditions
Symbol
Parameter and conditions
VDD
VCMOS
VREF
Supply voltageNote
CMOS I/O power supply at pad
2.5V controllers
1.8V controllers
Reference voltageNote
SVDD
Serial Presence Detector- positive power supply
VTERM
Termination Voltage
Note: See Direct RDRAM datasheet for more details.
MIN.
2.50 − 0.13
VDD
1.8 − 0.1
1.4 − 0.2
2.2
1.89 − 0.09
MAX.
2.50 + 0.13
VDD
1.8 + 0.2
1.4 + 0.2
3.6
1.89 + 0.09
Unit
V
V
V
V
V
Preliminary Data Sheet E0252N10 (Ver. 1.0)
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页数 | 13 页 | ||
下载 | [ MC-4R128FKK8K.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
MC-4R128FKK8K | 128MB 32-bit Direct Rambus DRAM RIMM Module | Elpida Memory |
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