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PDF ( 数据手册 , 数据表 ) MC-4R128FKE8D

零件编号 MC-4R128FKE8D
描述 Direct Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 18-BIT)
制造商 Elpida Memory
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MC-4R128FKE8D 数据手册, 描述, 功能
DATA SHEET
MOS INTEGRATED CIRCUIT
MC-4R128FKE8D
Direct Rambus DRAM RIMMTM Module
128M-BYTE (64M-WORD x 18-BIT)
Description
The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for
use in a broad range of applications including computer memory, personal computers, workstations, and other
applications where high bandwidth and low latency are required.
MC-4R128FKE8D modules consists of four 288M Direct Rambus DRAM (Direct RDRAM) devices (µPD488588).
These are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The use of Rambus Signaling
Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates while using conventional system and
board design technologies.
Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes).
The architecture of the Direct RDRAM enables the highest sustained bandwidth for multiple, simultaneous,
randomly addressed memory transactions. The separate control and data buses with independent row and column
control yield over 95 % bus efficiency. The Direct RDRAM's 32 banks support up to four simultaneous transactions
per device.
Features
184 edge connector pads with 1mm pad spacing
128 MB Direct RDRAM storage
Each RDRAMhas 32 banks, for 128 banks total on module
Gold plated contacts
RDRAMs use Chip Scale Package (CSP)
Serial Presence Detect support
Operates from a 2.5 V supply
Powerdown self refresh modes
Separate Row and Column buses for higher efficiency
Over Drive Factor (ODF) support
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for
availability and additional information.
Document No. E0078N20 (Ver 2.0)
Date Published May 2002 (K) Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2001-2002
NEC Corporation. 2000
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.







MC-4R128FKE8D pdf, 数据表
MC-4R128FKE8D
Electrical Specification
Absolute Maximum Ratings
Symbol
Parameter
MIN.
MAX.
Unit
VI,ABS
VDD,ABS
TSTORE
Voltage applied to any RSL or CMOS signal pad with respect to GND
Voltage on VDD with respect to GND
Storage temperature
0.3
0.5
50
VDD + 0.3
VDD + 1.0
+100
V
V
°C
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
DC Recommended Electrical Conditions
Symbol
Parameter and conditions
VDD
VCMOS
Supply voltage
CMOS I/O power supply at pad
VREF
VIL
VIH
VIL,CMOS
VIH,CMOS
VOL,CMOS
VOH,CMOS
IREF
ISCK,CMD
ISIN,SOUT
Reference voltage
RSL input low voltage
RSL input high voltage
CMOS input low voltage
CMOS input high voltage
CMOS output low voltage, IOL,CMOS = 1 mA
CMOS output high voltage, IOH,CMOS = 0.25 mA
VREF current, VREF,MAX
CMOS input leakage current, (0 VCMOS VDD)
CMOS input leakage current, (0 VCMOS VDD)
MIN.
MAX.
Unit
2.50 0.13
2.50 + 0.13
V
2.5V controllers 2.5 0.13
2.5 + 0.25
V
1.8V controllers
1.8 0.1
1.8 + 0.2
1.4 0.2
1.4 + 0.2
V
VREF 0.5
VREF 0.2
V
VREF + 0.2
VREF + 0.5
V
0.3
0.5VCMOS 0.25 V
0.5VCMOS+0.25
VCMOS + 0.3
0.3
V
V
VCMOS 0.3
V
40.0
+40.0
µA
40.0
+40.0
µA
10.0
+10.0
µA
8 Data Sheet E0078N20 (Ver 2.0)














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