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PDF ( 数据手册 , 数据表 ) ZNBG3113

零件编号 ZNBG3113
描述 FET BIAS CONTROLLER WITH POLARISATION SWITCH AND TONE DETECTION
制造商 Zetex Semiconductors
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ZNBG3113 数据手册, 描述, 功能
FET BIAS CONTROLLER WITH POLARISATION ZNBG3113
SWITCH AND TONE DETECTION
ZNBG3114
ISSUE 1 - OCTOBER 1998
DEVICE DESCRIPTION
The ZNBG series of devices are designed to
meet the bias requirements of GaAs and
HEMT FETs commonly used in satellite
receiver LNBs, PMR cellular telephones etc.
with a minimum of external components.
With the addition of two capacitors and a
resistor the devices provide drain voltage and
current control for three external grounded
source FETs, generating the regulated
negative rail required for FET gate biasing
whilst operating from a single supply. This
negative bias, at -3 volts, can also be used to
supply other external circuits.
The ZNBG3113/14 includes bias circuits to
drive up to three external FETs. A control
input to the device selects either one of two
FETs as operational, the third FET is
permanently active. This feature is
particularly used as an LNB polarisation
switch. Also specific to LNB applications is
the 22kHz tone detection and logic output
feature which is used to enable high and low
band frequency switching.
The facility to control the tone switching
delay is provided. This allows the rejection
of other lower frequency tones tat may be
present in multiple LNB applications.
FEATURES
Provides bias for GaAs and HEMT FETs
Drives up to three FETs
Dynamic FET protection
Drain current set by external resistor
Regulated negative rail generator
requires only 2 external capacitors
Choice in drain voltage
Wide supply voltage range
Polarisation switch for LNBs
22KHz tone detection for band
switching
Programmable tone delay
Compliant with ASTRA control
specifications
QSOP surface mount package
Drain current setting of the ZNBG3113/14 is
user selectable over the range 0 to 15mA, this
is achieved with addition of a single resistor.
The series also offers the choice of drain
voltage to be set for the FETs, the 3113 gives
2.2 volts drain whilst the 3114 gives 2 volts.
These devices are unconditionally stable
over the full working temperature with the
FETs in place, subject to the inclusion of the
recommended gate and drain capacitors.
These ensure RF stability and minimal
injected noise.
It is possible to use less than the devices full
complement of FET bias controls, unused
drain and gate connections can be left open
circuit without affecting operation of the
remaining bias circuits.
To protect the external FETs the circuits have
been designed to ensure that, under any
conditions including power up/down
transients, the gate drive from the bias
circuits cannot exceed the range -3.5V to 1V.
Furthermore if the negative rail experiences
a fault condition, such as overload or short
circuit, the drain supply to the FETs will shut
down avoiding excessive current flow.
The ZNBG3113/14 are available in QSOP20
for the minimum in device size. Device
operating temperature is -40 to 70°C to suit
a wide range of environmental conditions.
APPLICATIONS
Satellite receiver LNBs
Private mobile radio (PMR)
Cellular telephones
4-123







ZNBG3113 pdf, 数据表
ZNBG3113
ZNBG3114
FUNCTIONAL DIAGRAM
FUNCTIONAL DESCRIPTION
The ZNBG devices provide all the bias requirements for external FETs, including the generation
of the negative supply required for gate biasing, from the single supply voltage.The diagram
above shows a single stage from the ZNBG series. The ZNBG3113/14 contains 3 such stages. The
negative rail generator is common to both devices.
The drain voltage of the external FET QN is set by the ZNBG device to its normal operating voltage.
This is determined by the on board VD Set reference, for the ZNBG3113 this is nominally 2.2 volts
whilst the ZNBG3114 provides nominally 2 volts.
The drain current taken by the FET is monitored by the low value resistor ID Sense. The amplifier
driving the gate of the FET adjusts the gate voltage of QN so that the drain current taken matches
the current called for by an external resistor RCAL.
Since the FET is a depletion mode transistor, it is often necessary to drive its gate negative with
respect to ground to obtain the required drain current. To provide this capability powered from
a single positive supply, the device includes a low current negative supply generator. This
generator uses an internal oscillator and two external capacitors, CNB and CSUB.
4-130







ZNBG3113 equivalent, schematic
ZNBG3113
ZNBG3114
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
Zetex Inc.
47 Mall Drive, Unit 4
Commack NY 11725
USA
Telephone: (516) 543-7100
Fax: (516) 864-7630
Zetex (Asia) Ltd.
3510 Metroplaza, Tower 2
Hing Fong Road,
Kwai Fong, Hong Kong
Telephone:(852) 26100 611
Fax: (852) 24250 494
These are supported by
agents and distributors in
major countries world-wide
©Zetex plc 1998
Internet:http://www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or
services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of
any product or service.










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