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零件编号 | UN2225 | ||
描述 | Silicon NPN epitaxial planar type | ||
制造商 | Panasonic Semiconductor | ||
LOGO | |||
1 Page
Transistors with built-in Resistor
UNR2225 (UN2225), UNR2226 (UN2226),
UNR2227 (UN2227)
Silicon NPN epitaxial planar type
For muting
0.40+–00..0150
3
Unit: mm
0.16+–00..0160
■ Features
• Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
• Mini type package allowing easy automatic insertion through tape
packing and magazine packing
■ Resistance by Part Number
• UNR2225
• UNR2226
• UNR2227
Marking Symbol (R1)
(UN2225) FZ
10 kΩ
(UN2226) FY
4.7 kΩ
(UN2227) FW 6.8 kΩ
(R2)
6.8 kΩ
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
30
20
5
600
200
150
−55 to +150
Unit
V
V
V
mA
mW
°C
°C
12
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
10˚
Internal Connection
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
R1
B
R2
C
E
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current UNR2227
transfer ratio UNR2225/2226
VCBO
VCEO
VEBO
ICBO
IEBO
hFE
IC = 1 µA, IE = 0
IC = 2 mA, IB = 0
IE = 1 µA, IC = 0
VCB = 30 V, IE = 0
VEB = 5 V, IC = 0
VCE = 10 V, IC = 100 mA
Collector-emitter saturation voltage
Input resistance UNR2226
UNR2227
VCE(sat)
R1
IC = 50 mA, IB = 2.5 mA
UNR2225
Resistance ratio UNR2227
R1/R2
Min Typ Max
30
20
5
1
1
70
100 600
80
−30% 4.7 +30%
6.8
10
0.8 1.0 1.2
Unit
V
V
V
µA
µA
mV
kΩ
Note) The part numbers in the parenthesis show conventional part number.
Publication date: December 2003
SJH00040CED
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页数 | 5 页 | ||
下载 | [ UN2225.PDF 数据手册 ] |
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