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零件编号 | UN1211 | ||
描述 | Silicon NPN epitaxial planer transistor | ||
制造商 | Panasonic Semiconductor | ||
LOGO | |||
1 Page
Transistors with built-in Resistor
UN1211/1212/1213/1214/1215/1216/1217/1218/1219/1210/
121D/121E/121F/121K/121L
Silicon NPN epitaxial planer transistor
For digital circuits
s Features
q Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s Resistance by Part Number
q UN1211
q UN1212
q UN1213
q UN1214
q UN1215
q UN1216
q UN1217
q UN1218
q UN1219
q UN1210
q UN121D
q UN121E
q UN121F
q UN121K
q UN121L
(R1)
10kΩ
22kΩ
47kΩ
10kΩ
10kΩ
4.7kΩ
22kΩ
0.51kΩ
1kΩ
47kΩ
47kΩ
47kΩ
4.7kΩ
10kΩ
4.7kΩ
(R2)
10kΩ
22kΩ
47kΩ
47kΩ
—
—
—
5.1kΩ
10kΩ
—
10kΩ
22kΩ
10kΩ
4.7kΩ
4.7kΩ
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
0.55±0.1
321
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
M Type Mold Package
Internal Connection
R1
B
R2
C
E
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
IC
PT
Tj
Tstg
Ratings
50
50
100
400
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
1
UN1211/1212/1213/1214/1215/1216/1217/1218/
Transistors with built-in Resistor
1219/1210/121D/121E/121F/121K/121L
Characteristics charts of UN1218
IC — VCE
240
Ta=25˚C
200
IB=1.0mA
0.9mA
160 0.8mA
0.7mA
120
0.6mA
80 0.5mA
0.4mA
0.3mA
40
0.2mA
0.1mA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
VCE(sat) — IC
100
IC/IB=10
30
10
3
1
Ta=75˚C
0.3
0.1 25˚C
0.03
– 25˚C
0.01
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
hFE — IC
160
VCE=10V
120
Ta=75˚C
80
25˚C
– 25˚C
40
0
1 3 10 30 100 300 1000
Collector current IC (mA)
Cob — VCB
6
f=1MHz
IE=0
Ta=25˚C
5
4
3
2
1
0
0.1 0.3 1 3 10 30 100
Collector to base voltage VCB (V)
10000
3000
1000
IO — VIN
VO=5V
Ta=25˚C
300
100
30
10
3
1
0.4 0.6 0.8 1.0 1.2 1.4
Input voltage VIN (V)
VIN — IO
100 VO=0.2V
Ta=25˚C
30
10
3
1
0.3
0.1
0.03
0.01
0.1
0.3 1 3 10 30
Output current IO (mA)
100
Characteristics charts of UN1219
IC — VCE
240
Ta=25˚C
200
IB=1.0mA
0.9mA
160
0.8mA
0.7mA
0.6mA
120
0.5mA
80 0.4mA
0.3mA
40 0.2mA
0.1mA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
8
VCE(sat) — IC
100
IC/IB=10
30
10
3
1
Ta=75˚C
0.3
25˚C
0.1
0.03
– 25˚C
0.01
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
hFE — IC
160
VCE=10V
120
80 Ta=75˚C
25˚C
– 25˚C
40
0
1 3 10 30 100 300 1000
Collector current IC (mA)
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页数 | 13 页 | ||
下载 | [ UN1211.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
UN1210 | Silicon NPN epitaxial planer transistor | Panasonic Semiconductor |
UN1211 | Silicon NPN epitaxial planer transistor | Panasonic Semiconductor |
UN1212 | Silicon NPN epitaxial planer transistor | Panasonic Semiconductor |
UN1213 | Silicon NPN epitaxial planer transistor | Panasonic Semiconductor |
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