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零件编号 | UN1115 | ||
描述 | Silicon PNP epitaxial planer transistor | ||
制造商 | Panasonic Semiconductor | ||
LOGO | |||
1 Page
Transistors with built-in Resistor
UN1111/1112/1113/1114/1115/1116/1117/1118/1119/1110/
111D/111E/111F/111H/111L
Silicon PNP epitaxial planer transistor
For digital circuits
s Features
q Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s Resistance by Part Number
q UN1111
q UN1112
q UN1113
q UN1114
q UN1115
q UN1116
q UN1117
q UN1118
q UN1119
q UN1110
q UN111D
q UN111E
q UN111F
q UN111H
q UN111L
(R1)
10kΩ
22kΩ
47kΩ
10kΩ
10kΩ
4.7kΩ
22kΩ
0.51kΩ
1kΩ
47kΩ
47kΩ
47kΩ
4.7kΩ
2.2kΩ
4.7kΩ
(R2)
10kΩ
22kΩ
47kΩ
47kΩ
—
—
—
5.1kΩ
10kΩ
—
10kΩ
22kΩ
10kΩ
10kΩ
4.7kΩ
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
0.55±0.1
321
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
M Type Mold Package
Internal Connection
R1
B
R2
C
E
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
IC
PT
Tj
Tstg
Ratings
–50
–50
–100
400
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
1
UN1111/1112/1113/1114/1115/1116/1117/1118/
Transistors with built-in Resistor
1119/1110/111D/111E/111F/111H/111L
Characteristics charts of UN1118
– 240
IC — VCE
Ta=25˚C
– 200
–160
–120
IB= –1.0mA
– 0.9mA
– 0.8mA
– 0.7mA
– 0.6mA
–80 –0.5mA
– 0.4mA
– 0.3mA
–40 –0.2mA
– 0.1mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
–100
– 30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
25˚C
Ta=75˚C
– 0.03
– 25˚C
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
hFE — IC
160
VCE= –10V
120
Ta=75˚C
80
25˚C
– 25˚C
40
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
Cob — VCB
6
f=1MHz
IE=0
Ta=25˚C
5
4
3
2
1
0
–0.1 –0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V)
–10000
– 3000
–1000
IO — VIN
VO= – 5V
Ta=25˚C
– 300
–100
– 30
–10
–3
–1
– 0.4
–0.6 –0.8 –1.0 –1.2
Input voltage VIN (V)
–1.4
–100
– 30
–10
VIN — IO
VO= – 0.2V
Ta=25˚C
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Output current IO (mA)
Characteristics charts of UN1119
– 240
– 200
–160
–120
IC — VCE
Ta=25˚C
IB= –1.0mA
– 0.9mA
– 0.8mA
– 0.7mA
–80 –0.6mA
–0.5mA
–0.4mA
–40 –0.3mA
–0.2mA
0 –0.1mA
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
–100
– 30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
25˚C
Ta=75˚C
– 0.03
– 25˚C
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
8
hFE — IC
160
VCE= –10V
120
Ta=75˚C
80
25˚C
– 25˚C
40
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
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页数 | 13 页 | ||
下载 | [ UN1115.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
UN1110 | Silicon PNP epitaxial planer transistor | Panasonic Semiconductor |
UN1111 | Silicon PNP epitaxial planer transistor | Panasonic Semiconductor |
UN1112 | Silicon PNP epitaxial planer transistor | Panasonic Semiconductor |
UN1113 | Silicon PNP epitaxial planer transistor | Panasonic Semiconductor |
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