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零件编号 | ULBM2TE | ||
描述 | NPN SILICON RF POWER TRANSISTOR | ||
制造商 | Advanced Semiconductor | ||
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ULBM2TE
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI ULBM2TE is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 0.40 A
VCBO
36 V
VCEO
16 V
VEBO
PDISS
TJ
TSTG
θJC
4.0 V
5 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
35 OC/W
PACKAGE STYLE TO-39GE
B
C
ØA
45°
ØD
E
F
GH
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A .200 / 5.080
B .029 / 0.740
.045 / 1.140
C .028 / 0.720
.034 / 0.860
D .355 / 9.020
.370 / 9.370
E .315 / 8.010
.335 / 8.500
F .165 / 4.200
.180 / 4.570
G .500 / 12.700
.750 / 19.050
H .016 / 0.410
.020 / 0.508
ORDER CODE: ASI10679
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCEO
IC = 50 mA
BVCES
IC = 50 mA
RBE = 10 Ω
BVEBO
IE = 1.0 mA
ICBO
VCB = 15 V
hFE VCE = 5.0 V
IC = 50 mA
MINIMUM TYPICAL MAXIMUM
16
36
4.0
1.0
20 200
UNITS
V
V
V
mA
---
Cob VCB = 12.5 V
f = 1.0 MHz
10 pF
PG
VCE = 12.5 V
POUT = 2.0 W
f = 470 MHz
8.0
ηC
55
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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页数 | 1 页 | ||
下载 | [ ULBM2TE.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
ULBM2T | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
ULBM2TE | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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