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PDF ( 数据手册 , 数据表 ) ULBM10

零件编号 ULBM10
描述 NPN SILICON RF POWER TRANSISTOR
制造商 Advanced Semiconductor
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ULBM10 数据手册, 描述, 功能
ULBM10
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI ULBM10 is Designed for
FEATURES:
Omnigold™ Metalization System
MAXIMUM RATINGS
IC 2.5 A
VCBO
36 V
VCEO
16 V
VCES
36 V
VEBO
PDISS
TJ
TSTG
θJC
4.0 V
58 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
7.0 OC/W
PACKAGE STYLE .280 4L STUD
A
45°
B
D
E
F
C
J
I
G
H
K
#8-32 UNC
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A 1.010 / 25.65
1.055 / 26.80
B .220 / 5.59
.230 /5.84
C .270 / 6.86
.285 / 7.24
D .003 / 0.08
.007 / 0.18
E .117 / 2.97
.137 / 3.48
F .572 / 14.53
G .130 / 3.30
H .245 / 6.22
.255 / 6.48
I .640 / 16.26
J .175 / 4.45
.217 / 5.51
K .275 / 6.99
.285 / 7.24
ORDER CODE: ASI10682
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCEO
IC = 20 mA
BVCES
IC = 25 mA
BVEBO
IE = 10 mA
ICEO
VCB = 15 V
ICES VCE = 10 V
hFE VCE = 5.0 V
IC = 1.0 A
MINIMUM TYPICAL MAXIMUM
16
36
4.0
2.0
3.0
10 ---
UNITS
V
V
V
mA
mA
---
Cob VCB = 12.5 V
f = 1.0 MHz
25 pF
PG
VCC = 12.5 V
POUT = 10 W
ηC
f = 470 MHz 7.0
60
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1












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