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PDF ( 数据手册 , 数据表 ) PUB4702

零件编号 PUB4702
描述 Silicon N-Channel Power F-MOS FET
制造商 Panasonic Semiconductor
LOGO Panasonic Semiconductor LOGO 


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PUB4702 数据手册, 描述, 功能
Power Transistor Arrays (F-MOS FETs)
PUB4702
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed
q High-speed switching
q Low ON-resistance
q No secondary breakdown
q Low-voltage drive
q Incorporating built-in zener diodes
s Applications
q Contactless relay
q Diving circuit for a solenoid
q Driving circuit for a motor
q Control equipment
q Switching power supply
s Absolute Maximum Ratings (TC = 25°C)
Parameter
Symbol Ratings
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
DC
Pulse
Avalanche energy capacity
VDSS
VGSS
ID
IDP
EAS*
35 ± 10
±15
±1
±2
2.5
Allowable power
dissipation
TC = 25°C
PD
Ta = 25°C
15
3.5
Channel temperature
Storage temperature
Tch 150
Tstg 55 to +150
* L = 5mH, IL = 1A, 1 pulse
Unit
V
V
A
A
mJ
W
°C
°C
s Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
Drain to Source cut-off current IDSS
Gate to Source leakage current IGSS
Drain to Source breakdown voltage VDSS
Gate threshold voltage
Vth
Drain to Source ON-resistance
RDS(on)1
RDS(on)2
Forward transfer admittance
| Yfs |
Diode forward voltage
VDSF
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source) Crss
Turn-on time
ton
Fall time
tf
Turn-off time (delay time)
td(off)
VDS = 25V, VGS = 0
VGS = ±15V, VDS = 0
ID = 1mA, VGS = 0
VDS = 10V, ID = 1mA
VGS = 10V, ID = 0.5A
VGS = 4V, ID = 0.5A
VDS = 10V, ID = 0.5A
IDR = 1A, VGS = 0
VDS = 10V, VGS = 0, f = 1MHz
VGS = 10V, ID = 0.5A
VDD = 25V, RL = 50
unit: mm
25.3±0.2
4.0±0.2
C1.5±0.5
0.5±0.15
1.0±0.25
2.54±0.2
9!2.54=22.86±0.25
1 2 3 4 5 6 7 8 9 10
0.8±0.25
0.5±0.15
G: Gate
D: Drain
S: Source
10-Lead Plastic SIL Package
min typ max Unit
10 µA
±10 µA
25 45 V
1 2.5 V
220 380 m
390 680 m
0.6 1
S
1.5 V
135 pF
85 pF
50 pF
120 ns
390 ns
800 ns
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