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PDF ( 数据手册 , 数据表 ) RA07M2127M-01

零件编号 RA07M2127M-01
描述 MITSUBISHI RF MOSFET MODULE
制造商 Mitsubishi Electric Semiconductor
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RA07M2127M-01 数据手册, 描述, 功能
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF MOSFET MODULE
RA07M2127M
215-270MHz 7W 7.2V, 2Stage Amp. For PORTABLE RADIO
DESCRIPTION
The RA07M2127M is a 7-watt RF MOSFET Amplifier Module
for 7.2-volt portable radios that operate in the 215- to 270-MHz
range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the drain
and the RF input signal attenuates up to 60 dB. The output power
and drain current increase as the gate voltage increases. With a
gate voltage around 2.5V (minimum), output power and drain
current increases substantially. The nominal output power
becomes available at 3V (typical) and 3.5V (maximum). At
VGG=3.5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=7.2V, VGG=0V)
• Pout>7W @ VDD=7.2V, VGG=3.5V, Pin=20mW
ηT>45% @ Pout=6.5W (VGG control), VDD=7.2V, Pin=20mW
• Broadband Frequency Range: 215-270MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=3.5V
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain current
with the gate voltage and controlling the output power with the
input power
BLOCK DIAGRAM
2
3
14
5
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (Pout)
5 RF Ground (Case)
PACKAGE CODE: H46S
ORDERING INFORMATION:
ORDER NUMBER
RA07M2127M-E01
RA07M2127M-01
(Japan - packed without desiccator)
SUPPLY FORM
Antistatic tray,
25 modules/tray
RA 07M2127M
MITSUBISHI ELECTRIC
1/9
25 April 2003







RA07M2127M-01 pdf, 数据表
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA07M2127M
Output Power Control:
Depending on linearity, the following two methods are recommended to control the output power:
a) Non-linear FM modulation:
By the gate voltage (VGG).
When the gate voltage is close to zero, the RF input signal is attenuated up to 60 dB and only a small leakage
current flows from the battery into the drain.
Around VGG=2.5V, the output power and drain current increases substantially.
Around VGG=3V (typical) to VGG=3.5V (maximum), the nominal output power becomes available.
b) Linear AM modulation:
By RF input power Pin.
The gate voltage is used to set the drain’s quiescent current for the required linearity.
Oscillation:
To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain,
a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor.
When an amplifier circuit around this module shows oscillation, the following may be checked:
a) Do the bias decoupling capacitors have a low inductance pass to the case of the module?
b) Is the load impedance ZL=50?
c) Is the source impedance ZG=50?
Frequent on/off switching:
In base stations, frequent on/off switching can cause thermal expansion of the resin that coats the transistor chips and
can result in reduced or no output power. The bond wires in the resin will break after long-term thermally induced
mechanical stress.
Quality:
Mitsubishi Electric is not liable for failures resulting from base station operation time or operating conditions exceeding
those of mobile radios.
This module technology results from more than 20 years of experience, field proven in tens of millions of mobile radios.
Currently, most returned modules show failures such as ESD, substrate crack, and transistor burnout, which are
caused by improper handling or exceeding recommended operating conditions. Few degradation failures are found.
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur. Trouble with semiconductors may lead to personal injury, fire or property
damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such
as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against any
malfunction or mishap.
RA 07M2127M
MITSUBISHI ELECTRIC
8/9
25 April 2003














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